DVIULC6-4SC6Y Automotive ultralow capacitance ESD protection Datasheet production data Features 4-line ESD protection (IEC 61000-4-2) Protects V when applicable BUS Ultralow capacitance: 0.6 pF at F = 825 MHz Fast response time compared with varistors SOT23-6L (JEDEC MO178AB) RoHS compliant AEC-Q101 qualified Benefits Applications ESD protection of V BUS DVI ports up to 1.65 Gb/s Optimized rise and fall times for maximum data HDMI ports up to 1.65 Gb/s integrity IDB 1394 Consistent D+ / D- signal balance: USB 2.0 ports up to 480 Mb/s (high speed), Optimum capacitance matching tolerance backwards compatible with USB1.1 low and full for ultralow intra pair skew: speed I/O to ground = 0.015 pF, Ethernet port: 10/100/1000 Mb/s I/O to I/O = 0.007 pF SIM card protection Matching high bit rate DVI, HDMI, and IDB 1394 bus requirements Video line protection 2 Low PCB space occupation: 9 mm Higher reliability offered by monolithic Description integration The DVIULC6-4SC6Y is a monolithic, application specific discrete device dedicated to ESD Complies with these standards protection of high speed interfaces, such as DVI, ISO 10605 (C = 330 pF, R = 330 HDMI, IDB 1394 bus, USB2.0, Ethernet links and 18 kV (air discharge) video lines. 18 kV (contact discharge) Its ultralow line capacitance secures a high level ISO 10605 (C = 150 pF, R = 330 of signal integrity without compromise in protecting sensitive chips against the most 18 kV (air discharge) stringently characterized ESD strikes. 18 kV (contact discharge) MIL STD883G-Method 3015-7 ISO 7637-2 Pulse 3a: V = -150 V S Pulse 3b: V = 100 V S September 2012 Doc ID 018878 Rev 2 1/12 This is information on a product in full production. www.st.com 12Characteristics DVIULC6-4SC6Y 1 Characteristics Figure 1. Functional diagram I/O1 11 6 I/O4 GND 2 5 V BUS I/O2 3 4 I/O3 Table 1. Absolute ratings Symbol Parameter Value Unit ISO 10605 (C = 330 pF, R = 330 18 air discharge contact discharge 18 V Peak pulse voltage ISO 10605 (C = 150 pF, R = 330 kV PP air discharge 18 contact discharge 18 MIL STD883G-Method 3015-7 25 T Storage temperature range -65 to +150 C stg T Operating junction temperature range -40 to +150 C j T Lead solder temperature (10 seconds duration) 260 C L Table 2. Electrical characteristics (T = 25 C) amb Value Symbol Parameter Test conditions Unit Min. Typ. Max. I Leakage current V = 5 V 0.5 A RM RM Breakdown voltage V I = 1 mA 6 V BR R between V and GND BUS I = 1 A, t = 8/20 s PP p 12 V Any I/O pin to GND V Clamping voltage CL I = 5 A, t = 8/20 s PP p 17 V Any I/O pin to GND V = 0 V, F= 1 MHz 0.85 1 Capacitance between I/O R C i/o-GND and GND V = 0 V, F= 825 MHz 0.6 R pF C Capacitance variation i/o- 0.015 between I/O and GND GND V = 0 V, F= 1 MHz 0.42 0.5 R C Capacitance between I/O i/o-i/o V = 0 V, F= 825 MHz 0.3 R pF Capacitance variation C 0.007 i/o-i/o between I/O 2/12 Doc ID 018878 Rev 2