ESDA5-1F4 Low clamping single line unidirectional ESD Datasheet - production data Applications Where transient over voltage protection in ESD sensitive equipment is required, such as: Smartphones, mobile phones and accessories Tablet, PC, netbooks and notebooks Portable multimedia devices and accessories Digital cameras and camcorders Communication and highly integrated systems 0201 package Description The ESDA5-1F4 is a unidirectional single line Features TVS diode designed to protect the data line or other I/O ports against ESD transients. Low clamping voltage: -3 V / +9 V (IEC 61000-4-2 contact The device is ideal for applications where both discharge at 30 ns) reduced line capacitance and board space saving Unidirectional device are required. Low leakage current Figure 1: Functional diagram 0201 package ECOPACK 2 compliant component Complies with the following standards IEC 61000-4-2, level 4 (exceed level 4) 30 kV (air discharge) 30 kV (contact discharge) May 2017 DocID030582 Rev 1 1/9 www.st.com This is information on a product in full production. Characteristics ESDA5-1F4 1 Characteristics Table 1: Absolute maximum ratings (Tamb = 25 C) Symbol Parameter Value Unit IEC61000-4-2 contact discharge 30 V Peak pulse voltage kV pp IEC61000-4-2 air discharge 30 Ppp Peak pulse power (8/20s) 110 W I Peak pulse current (8/20s) 11 A pp Tj Operating junction temperature range -55 to +150 T Storage junction temperature range -65 to +150 C stg TL Maximum lead temperature for soldering during 10 s 260 Figure 2: Electrical characteristics (definitions) Table 2: Electrical characteristics (Tamb = 25 C) Symbol Parameter Test condition Min. Typ. Max. Unit V Breakdown voltage I = 1 mA 5.8 V BR R VRM Reverse working voltage 5.5 V I Leakage current V = 5.5 V 100 nA RM RM IEC 61000-4-2, +8 kV 9.0 V contact measured at 30 ns V Clamping voltage CL IEC 61000-4-2, -8 kV -3.0 V contact measured at 30 ns Direct 0.17 Dynamic resistance, pulse R d (1) duration 100 ns Forward 0.14 VLINE = 0 V, F = 1 MHz, C Line capacitance 110 pF LINE VOSC = 30 mV Notes: (1) More information are available in ST application note: AN4022 2/9 DocID030582 Rev 1