EVALPWD13F60 STMicroelectronics

EVALPWD13F60 High-voltage evaluation board for the PWD13F60 full-bridge high density power driver Data brief Applications Motor drivers for industrial and home appliances Factory automation Fans and pumps HID, ballasts Power supply units DC-DC and DC-AC converters Description The PWD13F60 is a high density power driver integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration. The integrated power MOSFETs have a low R of 320 m and 600 V drain-source DS(on) breakdown voltage, while the embedded gate Features drivers high-side can be easily supplied by the integrated bootstrap diode. The high integration Power system-in-package integrating gate of the device allows loads in a tiny space to be drivers and high-voltage power MOSFETs: driven efficiently. Low R = 320 m DS(on) BV = 600 V DSS The PWD13F60 accepts a supply voltage (V ) CC Suitable for operating as: extending over a wide range and is protected by a low voltage UVLO detection on the supply Full-bridge voltage. Dual independent half-bridges Wide input supply voltage down to 6.5 V The input pin extended range allows easy UVLO protection on supply voltage interfacing with microcontrollers, DSP units or 3.3 V to 15 V compatible inputs with Hall effect sensors. hysteresis and pull-down The EVALPWD13F60 is 48 x 53 mm wide, FR-4 Interlocking function to prevent cross PCB resulting in an R of 18 C/W, capable to th(J-A) conduction drive loads up to 2 ARMS, without forced airflow Internal bootstrap diodes cooling. QFN (10x13 mm) package Very compact layout Both controlling and power signals are available RoHS compliant on pin strip for easy connection to customer s board. November 2017 DocID030879 Rev 2 1/7 www.st.com For further information contact your local STMicroelectronics sales office Schematic diagram EVALPWD13F60 1 Schematic diagram Figure 1: EVALPWD13F60 circuit schematic 2/7 DocID030879 Rev 2