HCF4030B QUAD EXCLUSIVE-OR GATE MEDIUM SPEED OPERATION - t = t PHL PLH = 65ns (TYP.) at C = 50pF and V V 10V L DD- SS = LOW OUTPUT IMPEDANCE : 500 (TYP.) at V V 10V DD- SS = QUIESCENT CURRENT SPECIFIED UP TO 20V DIP SOP 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT I = 100nA (MAX) AT V = 18V T = 25C I DD A 100% TESTED FOR QUIESCENT CURRENT ORDER CODES MEETS ALL REQUIREMENTS OF JEDEC PACKAGE TUBE T & R JESD13BSTANDARD SPECIFICATIONS DIP HCF4030BEY FOR DESCRIPTION OF B SERIES CMOS SOP HCF4030BM1 HCF4030M013TR DEVICE DESCRIPTION HCF4030B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. HCF4030B types consist of four indipendent exclusive-OR gates integrated on a single monolithic silicon chip. Each exclusive-OR gate consists of four n-channel and four p-channel enhancement-type transistors. All inputs and outputs are protected against electrostatic effects. PIN CONNECTION September 2002 1/10HCF4030B INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL NAME AND FUNCTION 2, 1, 5, 6, 8, A, B, C, D, E, Data Inputs 9, 12, 13 F, G, H 3, 4, 10, 11 J, K, L, M Data Outputs V 7 Negative Supply Voltage SS V 14 Positive Supply Voltage DD TRUTH TABLE IN1 IN2 OUT LL L LH H HL H HH L FUNCTIONAL DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Supply Voltage -0.5 to +22 V DD V DC Input Voltage -0.5 to V + 0.5 V I DD I DC Input Current 10 mA I P Power Dissipation per Package 200 mW D Power Dissipation per Output Transistor 100 mW T Operating Temperature -55 to +125 C op T Storage Temperature -65 to +150 C stg Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. All voltage values are referred to V pin voltage. SS 2/10