SMLVT3V3 STMicroelectronics

SMLVT3V3 Low voltage Transil Datasheet - production data Description This is a Transil diode designed specifically to protect sensitive 3.3 V equipment against A transient overvoltages. Transil diodes provide high overvoltage protection by clamping action. Their K instantaneous response to transient overvoltages make them particularly suited to protect voltage sensitive devices such as MOS technology and SMB low voltage supplied ICs. TM: Transil is a trademark of STMicroelectronics Features Peak pulse power 600 W (10/1000 s) Stand-off voltage 3.3 V Unidirectional type Low clamping factor Fast response time JEDEC registered package outline April 2017 DocID4146 Rev 5 1/8 www.st.com This is information on a product in full production. Characteristics SMLVT3V3 1 Characteristics Table 1: Absolute maximum ratings (limiting values at Tamb = 25 C unless otherwise specified) Symbol Parameter Value Unit (1) Ppp Peak pulse power dissipation Tj initial = Tamb 600 W P Power dissipation on infinite heatsink Tamb = 50 C 6 W tp = 10 ms Non repetitive surge peak forward current I 100 A FSM for unidirectional types Tj initial = Tamb Tstg Storage temperature range -65 to +175 C Tj Junction temperature range -55 to +175 C T Maximum lead temperature for soldering during 10 s. 260 C L Notes: (1) For a surge greater than the maximum values, the diode will fail in short-circuit. Table 2: Thermal resistances Symbol Parameter Value Unit Rth(j-l) Junction to leads 20 C/W Junction to ambient on printed circuit on recommended pad layout Rth(j-a) 100 C/W Figure 1: Electrical characteristics (definitions) Table 3: Electrical characteristics (Tamb = 25 C) (1) (2) (3) IRM at VRM VBR at IR VCL at IPP 10/1000 s VCL at IPP 8/20 s T C Max. Min. Max. Max. Max. Typ. Type -4 A V V mA V A V A 10 /C pF SMLVT3V3 200 3.3 4.1 1 7.3 50 10.3 200 -5.3 5200 Notes: (1) Pulse test : t < 50 ms p (2) VBR = T x (Tamb -25) x VBR (25 C) (3) V = 0 V, F = 1 MHz R 2/8 DocID4146 Rev 5