STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND N-channel 600 V, 0.13 typ., 23 A FDmesh II Power MOSFETs in DPAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB V DS 2 Order codes R I DS(on) max D 3 T J max. 1 3 2 1 2 STB28NM60ND D PAK TO-220FP STF28NM60ND TAB 650 V 0.150 23 A STP28NM60ND STW28NM60ND 3 33 2 22 1 11 Intrinsic fast-recovery body diode TO-220 TO-247 100% avalanche tested Low input capacitance and gate charge Figure 1. Internal schematic diagram Low gate input resistance Extremely high dv/dt and avalanche capabilities % 7 Applications Switching applications * Description These FDmesh II Power MOSFETs with 6 intrinsic fast-recovery body diode are produced using the second generation of MDmesh technology. Utilizing a new strip-layout vertical 0 Y structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Table 1. Device summary Order codes Marking Packages Packaging 2 STB28NM60ND D PAK Tape and reel STF28NM60ND TO-220FP 28NM60ND STP28NM60ND TO-220 Tube STW28NM60ND TO-247 May 2014 DocID024520 Rev 3 1/22 This is information on a product in full production. www.st.com 22Contents STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 2 4.1 D PAK, STB28NM60ND 11 4.2 TO-220FP, STF28NM60ND . 13 4.3 TO-220, STP28NM60ND . 15 4.4 TO-247, STW28NM60ND 17 5 Packing mechanical data 19 6 Revision history . 21 2/22 DocID024520 Rev 3