STB31N65M5, STF31N65M5 STP31N65M5, STW31N65M5 Datasheet 2 N-channel 650 V, 0.124 , 22 A, MDmesh M5 Power MOSFETs in D PAK, TO220FP, TO220 and TO-247 packages Features TAB V T R max. I Order code Package DS JMAX DS(on ) D 3 1 3 2 2 STB31N65M5 D PAK D PAK 2 1 TO-220FP STF31N65M5 TO-220FP TAB 710 V 0.148 22 A STP31N65M5 TO-220 STW31N65M5 TO-247 3 3 2 TO-220 2 TO-247 1 1 Extremely low R DS(on) Low gate charge and input capacitance D(2, TAB) Excellent switching performance 100% avalanche tested Applications G(1) Switching applications S(3) Description AM01475v1 noZen These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. Product status link STB31N65M5 STF31N65M5 STP31N65M5 STW31N65M5 DS8912 - Rev 4 - April 2019 www.st.com For further information contact your local STMicroelectronics sales office.STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK, TO-220, TO-220FP TO-247 V Gate-source voltage 25 V GS Drain current (continuous) at (1) I 22 22 A D T = 25 C C Drain current (continuous) at (1) I 13.9 13.9 A D T = 100 C C (2) (1) I Drain current (pulsed) 88 A 88 DM P Total power dissipation at T = 25 C 150 30 W TOT C Insulation withstand voltage (RMS) from all three leads to external V 2500 V ISO heat-sink (t = 1 s, T = 25 C) C (3) Peak diode recovery voltage slope 15 dv/dt V/ns (4) dv/dt MOSFET dv/dt ruggedness 50 T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Limited by package. 2. Limited by maximum junction temperature. 3. I 22 A, di/dt 400 A/s V (peak) < V , V = 400 V. SD DS (BR)DSS DD 4. V 480 V. DS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 TO-220FP TO-247 R Thermal resistance junction-case 0.83 4.17 0.83 C/W thj-case R Thermal resistance junction-ambient 62.5 50 C/W thj-amb (1) R Thermal resistance junction-pcb 30 C/W thj-pcb 1. When mounted on FR-4 board of 1 inch, 2 oz Cu. DS8912 - Rev 4 page 2/29