X-On Electronics has gained recognition as a prominent supplier of STPS20120CTN schottky diodes & rectifiers across the USA, India, Europe, Australia, and various other global locations. STPS20120CTN schottky diodes & rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for schottky diodes & rectifiers, ensuring timely deliveries around the world.

STPS20120CTN

STPS20120CTN electronic component of STMicroelectronics
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Part No.STPS20120CTN
Manufacturer: STMicroelectronics
Category:Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers Pwr Schottky 2 x 100A 120V 0.54VF
Datasheet: STPS20120CTN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.1822 ea
Line Total: USD 5.18

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 5.1822
10 : USD 1.8699
100 : USD 1.5066
500 : USD 1.2394
1000 : USD 1.0258

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vr - Reverse Voltage
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We proudly offer the STPS20120CTN Schottky Diodes & Rectifiers at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the STPS20120CTN Schottky Diodes & Rectifiers.

STPS20120C Power Schottky rectifier Datasheet - production data Description This dual diode Schottky rectifier is suited for high . frequency switched mode power supplies. Packaged in DPAK, TO-220AB, TO-220AB narrow leads and IPAK, this device is intended to be used in notebook and LCD adaptors, desktop SMPS, providing in these applications a margin between the remaining voltages applied on the diode and the voltage capability of the diode . Table 1. Device summary 2 % QDUURZ OHDGV 7 . ,3 Symbol Value . I 2 X 10 A F(AV) V 120 V RRM T (max) 175 C j V (typ) 0.70 V F . 2 % 7 . 3 Features High junction temperature capability Good trade-off between leakage current and forward voltage drop Low leakage current Avalanche capability specified ECOPACK 2 compliant component for DPAK on demand November 2016 DocID11212 Rev 4 1/14 This is information on a product in full production. www.st.comCharacteristics STPS20120C 1 Characteristics Table 2. Absolute ratings (limiting values per diode at T = 25 C unless otherwise stated) amb Symbol Parameter Value Unit V Repetitive peak reverse voltage 120 V RRM I Forward rms current 30 A F(RMS) T = 150 C per diode 10 c Average forward current, I A F(AV) = 0.5, square wave T = 145 C per device 20 c I Surge non repetitive forward current t = 10 ms sinusoidal 150 A FSM p P Repetitive peak avalanche power t = 10 s, T = 125 C 330 W ARM p j T Storage temperature range -65 to +175 C stg (1) T Maximum operating junction temperature 175 C j dPtot 1 1. condition to avoid thermal runaway for a diode on its own heatsink < Rth(j-a) dTj Table 3. Thermal parameters Symbol Parameter Max. value Unit per diode 3 R Junction to case th(j-c) total 1.8 C/W R Coupling 0.6 th(c) When the two diodes 1 and 2 are used simultaneously: T (diode1) = P(diode1) x R (per diode) + P(diode2) x R j th(j-c) th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C -10A j (1) I Reverse leakage current V = V R R RRM T = 125 C - 1.5 5 mA j T = 25 C -0.70 j I = 2.5 A F T = 125 C - 0.54 0.58 j T = 25 C -0.92 j (2) V Forward voltage drop I = 10 A V F F T = 125 C - 0.70 0.74 j T = 25 C -1.02 j I = 20 A F T = 125 C - 0.81 0.86 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.62 x I + 0.012 x I F(AV) F (RMS) 2/14 DocID11212 Rev 4

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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