STPS20200CTN STMicroelectronics

STPS20200C Power Schottky diode Datasheet production data Features Low forward voltage drop Diode 1 A1 Very small conduction losses K Diode 2 A2 Negligible switching losses Extremely fast switching Low thermal resistance K -40C minimum operating T j Insulated package: TO-220FPAB Insulating voltage: 2000 V DC A2 A2 K Capacitance: 45 pF K A1 A1 ECOPACK 2 compliant component TO-220AB TO-220FPAB STPS20200CT STPS20200CFP Description K This device is a dual center tap 200 V Schottky K rectifier suited for switch mode power supplies and high frequency DC to DC converters. Packaged in TO-220AB, TO-220AB narrow-leads, A2 A2 TO-220FPAB and DPAK, it is especially intended K A1 A1 for use as secondary rectification in SMPS and is 2 D PAK TO-220AB also ideal for all LED lighting applications. STPS20200CG-TR narrow leads STPS20200CTN Table 1. Device summary Symbol Value I 2 x 10 A F(AV) V 200 V RRM T 175 C j(max) V 0.64 V F(typ) October 2013 DocID024382 Rev 2 1/15 This is information on a product in full production. www.st.com 15Characteristics STPS20200C 1 Characteristics Table 2. Absolute ratings (limiting values, per diode, unless otherwise stated) Uni Symbol Parameter Value t V Repetitive peak reverse voltage 200 V RRM I Forward rms current 30 A F(RMS) 2 TO-220AB, D PAK, T = 160 C Per device 20 A Average forward current, = 0.5, c TO 220AB narrow leads I F(AV) square wave TO-220FPAB T = 105 C Per device 20 A c Surge non repetitive forward I t = 10 ms sinusoidal, T = 25 C 180 A FSM p amb current T Storage temperature range -65 to +175 C stg (1) T Operating junction temperature range -40 to +175 C j dPtot 1 1. --------------- < -------------------------- condition to avoid thermal runaway for a diode on its own heatsink dTj Rth()j a Table 3. Thermal parameters Symbol Parameter Value Unit Per diode 1.30 2 D PAK, TO-220AB,TO-220AB narrow leads Per device 0.75 R Junction to case th(j-c) Per diode 5.00 TO-220FPAB C/W Per device 4.15 2 D PAK, TO-220AB, TO-220AB narrow leads 0.20 R Coupling th(c) TO-220FPAB 3.30 General formula to calculate T (diode1) and T (diode2): J J T (diode1) = P(diode1) x R (per diode) + P(diode2) x R + T j th(j-c) th(c) case T (diode2) = P(diode2) x R (per diode) + P(diode1) x R + T j th(j-c) th(c) case 2/15 DocID024382 Rev 2