STPS200170TV1Y Datasheet Automotive 170 V, 2 x 100 A, high voltage power Schottky rectifier A1 K1 Features A2 K2 AEC-Q101 qualified PPAP capable A2 Operating T from -40 C to +175 C j K2 Negligible switching losses Low leakage current A1 Avalanche rated K1 Good trade-off between leakage current and forward voltage drop ISOTOP Insulated package ISOTOP comply with UL1557 insulation: Insulated voltage: 2500 V sine RMS ECOPACK2 compliant component Applications DC/DC converter, especially in hybrid or electrical vehicles Secondary rectification LLC topologies Phase shift topologies Description Product status link This high voltage Schottky rectifier is suitable for high frequency switch mode power STPS200170TV1Y supplies. Packaged in ISOTOP, the STPS200170TV1Y is intended for use in secondary Product summary rectification applications and more precisely in DC/DC converters in hybrid and Symbol Value electrical vehicles. I F(AV) 2 x 100 A V 170 V RRM T (max.) 175 C j V (typ.) 0.63 V F DS6744 - Rev 5 - November 2020 www.st.com For further information contact your local STMicroelectronics sales office.STPS200170TV1Y Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values, per diode at T = 25 C, unless otherwise specified) amb Symbol Parameter Value Unit V Repetitive peak reverse voltage (T = -40 C to +175 C) 170 V RRM j I Forward rms current 200 A F(RMS) I T = 140 C, per diode Average forward current, = 0.5, square wave 100 A F(AV) C I Surge non repetitive forward current t = 10 ms sinusoidal 700 A FSM p P Repetitive peak avalanche power t = 10 s, T = 125 C 7200 W ARM p j T stg Storage temperature range -55 to +175 C (1) T Operating junction temperature range -40 to +175 C j 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameters Symbol Parameter Max. value Unit Per diode 0.4 R Junction to case C/W th(j-c) Total 0.2 For more information, please refer to the following application note: AN5088: Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 200 A j (1) V = V I Reverse leakage current R R RRM T = 125 C - 30 100 mA j T = 25 C - 0.85 j I = 100 A F T = 150 C - 0.63 0.68 j (2) V Forward voltage drop V F T = 25 C - 1.01 j I = 200 A F T = 150 C - 0.78 0.86 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the maximum conduction losses, use the following equation: 2 P = 0.5 x I + 0.0018 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses: AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses in a power diode DS6744 - Rev 5 page 2/10