STPS1L30MF STMicroelectronics

STPS1L30MF Low drop power Schottky rectifier in flat package Main product characteristics A I 1 A F(AV) V 30 V RRM K T (max) 150 C j V (max) 0.39 V F STmite flat (DO222-AA) Features and benefits Very low profile package: 0.85 mm Description Backward compatible with standard STmite Single Schottky rectifier suited for switch mode footprint power supplies and high frequency DC to DC Very small conduction losses converters. Negligible switching losses Packaged in STmite flat, this device is intended Extremely fast switching for use in very low voltage, high frequency inverters, free wheeling and polarity protection Low forward voltage drop for higher efficiency applications. Due to the very small size of the and extended battery life package this device fits battery powered Low thermal resistance equipment (cellular, notebook, PDAs, printers) as Avalanche capability specified well as chargers and PCMCIA cards. Order Code Part number Marking STPS1L30MF F1L3 Table 1. Absolute ratings (limiting values) Symbol Parameter Value Unit V Repetitive peak reverse voltage 30 V RRM I RMS forward voltage 2 A F(RMS) I Average forward current T = 140 C = 0.5 1 A F(AV) c I Surge non repetitive forward current t = 10 ms sinusoidal 50 A FSM p P Repetitive peak avalanche power t = 1 s T = 25 C 1200 W ARM p j T Storage temperature range -65 to + 150 C stg (1) T Maximum operating junction temperature 150 C j dV/dt Critical rate of rise of reverse voltage (rated V , T = 25 C) 10000 V/s R j dPtot 1 --------------- -------------------------- 1. < condition to avoid thermal runaway for a diode on its own heatsink dTj Rth()j a August 2006 Rev 1 1/7 www.st.comCharacteristics STPS1L30MF 1 Characteristics Table 2. Thermal resistance Symbol Parameter Value Unit R Junction to case 20 C/W th(j-c) (1) R Junction to ambient 250 C/W th(j-a) 1. Mounted with minimum recommended pad size, PC board FR4 Table 3. Static electrical characteristics Symbol Parameter Tests conditions Min. Typ Max. Unit T = 25 C 0.13 0.39 j V = V R RRM T = 85 C 5.25 16.5 j T = 25 C 0.05 0.24 j (1) I Reverse leakage current V = 20 V mA R R T = 85 C 3.5 10.5 j T = 25 C 0.03 0.15 j V = 10 V R T = 85 C 2.4 7 j T = 25 C 0.33 0.39 j I = 1 A F T = 85 C 0.28 0.34 j T = 25 C 0.39 0.45 j I = 2 A F T = 85 C 0.36 0.42 j (1) V Forward voltage drop V F T = 25 C 0.45 0.53 j I = 3 A F T = 85 C 0.43 0.51 j T = 25 C 0.50 0.60 j I = 4 A F T = 85 C 0.50 0.60 j 1. Pulse test: = 380 s, < 2% 2 To evaluate the conduction losses use the following equation: P = 0.26 x I + 0.08 I F(AV) F (RMS) 2/7