STPS160H100TV STMicroelectronics

STPS160H100TV High voltage power Schottky rectifier Datasheet - production data Description A1 K1 High frequency dual Schottky rectifier designed A2 K2 for high frequency telecom, computer SMPS and other power converters. A2 Packaged in ISOTOP, this device is intended for use in medium voltage operation and in high K2 frequency circuitries where low switching losses and low noise are required. A1 Table 1: Device summary K1 Symbol Value ISOTOP I 2 x 80 A F(AV) VRRM 100 V T (max.) 150 C j Features VF (max.) 0.68 V Negligible switching losses High junction temperature capability Low leakage current Good trade-off between leakage current and TM: ISOTOP is a trademark of forward voltage drop STMicroelectronics Avalanche rated Low induction package Insulated package ISOTOP: Insulated voltage: 2500 VRMS Capacitance: 45 pF November 2017 DocID5384 Rev 5 1/10 www.st.com This is information on a product in full production. Characteristics STPS160H100TV 1 Characteristics Table 2: Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V I Forward rms current 180 A F(RMS) Per diode 80 IF(AV) Average forward current, = 0.5 TC = 110 C A Per device 160 I Surge non repetitive forward current t = 10 ms sinusoidal 1000 A FSM p I Repetitive peak reverse current t = 2 s square f = 1 kHz 2 A RRM p I Non repetitive peak reverse current tp = 100 s square 10 A RSM PARM Repetitive peak avalanche power tp = 10 s Tj = 125 C 5400 W T Storage temperature range -55 to +150 C stg (1) Tj Maximum operating junction temperature 150 C Notes: (1) (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 3: Thermal parameters Maximum Symbol Parameter Unit values Per diode 0.9 R Junction to case th(j-c) Total 0.5 C/W R Coupling 0.14 th(c) When the diodes 1 and 2 are used simultaneously: Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) 2/10 DocID5384 Rev 5