X-On Electronics has gained recognition as a prominent supplier of STPS15L25D Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPS15L25D Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.
We are delighted to provide the STPS15L25D from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPS15L25D and other electronic components in the Schottky Diodes & Rectifiers category and beyond.
STPS15L25D/G LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS I 15 A F(AV) V 25 V RRM K Tj (max) 150 C V (max) 0.35 V F A FEATURES A NC K n VERY LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION AND RE- DUCED HEATSINK n OPTIMIZED CONDUCTION/REVERSE LOSSES TRADE-OFF WHICH MEANS THE HIGHEST 2 TO-220AC D PAK EFFICIENCY IN THE APPLICATIONS STPS15L25D STPS15L25G n AVALANCHE CAPABILITY SPECIFIED DESCRIPTION Single Schottky rectifier suited for Switched Mode Power Supplies and high frequency DC to DC converters (V ). RMS 2 Packaged in TO-220AC or D PAK, this device is especially intended for use as a Rectifier at the secondary of 3.3V SMPS and DC/DC units. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit V Repetitive peak reverse voltage 25 V RRM I RMS forward current 30 A F(RMS) I Average forward current Tc = 145C = 0.5 15 A F(AV) I Surge non repetitive forward current tp = 10ms Sinusoidal 250 A FSM I Repetitive peak reverse current tp = 2s square F=1kHz 1A RRM I Non repetitive peak reverse current tp = 100s square 4A RSM P Repetitive peak avalanche power tp = 1s Tj = 25C 9000 W ARM T Storage temperature range -65to+150 C stg Tj Maximum operating junction temperature * 150 C Critical rate of rise of reverse voltage dV/dt 10000 V/s dPtot 1 *: < thermal runaway condition for a diode on its own heatsink dTj Rth()j - a July 2003 - Ed : 5B 1/5STPS15L25D/G THERMAL RESISTANCES Symbol Parameter Value Unit R Junction to case 1 C/W th(j-c) STATIC ELECTRICAL CHARACTERISTICS Symbol Parameters Test conditions Min. Typ. Max. Unit I * Reverse leakage current Tj = 25C V = 1.3 mA R R V RRM Tj = 125C 225 450 mA V * Forward voltage drop Tj = 25C I = 15A 0.46 V F F Tj = 125C I = 15A 0.3 0.35 F Tj = 25C I = 30A 0.56 F Tj = 125C I = 30A 0.41 0.46 F Pulse test : * tp = 380 s, <2% To evaluate the maximum conduction losses use the following equation : 2 P=0.24xI + 0.0073 I F(AV) F (RMS) Fig. 1: Average forward power dissipation versus Fig. 2: Average forward current versus ambient average forward current. temperature ( = 0.5). IF(av)(A) PF(av)(W) 16 8 = 0.1 = 0.2 = 0.05 14 = 0.5 Rth(j-a)=Rth(j-c) 7 12 6 10 5 8 4 = 1 Rth(j-a)=50C/W 6 3 T T 4 2 1 2 IF(av) (A) =tp/T tp tp Tamb(C) =tp/T 0 0 0 2 4 6 8 10 12 14 16 0 25 50 75 100 125 150 Fig. 3: Normalized avalanche power derating Fig. 4: Normalized avalanche power derating versus pulse duration. versus junction temperature. P(t) ARM p P(ARMtp) PARM(1s) PARM(25C) 1 1.2 1 0.1 0.8 0.6 0.4 0.01 0.2 Tj(C) t (s) p 0.001 0 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 2/5
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