STPS16150CT STMicroelectronics

STPS16150C Datasheet 150 V power Schottky rectifier Features A1 K A2 High junction temperature capability Good trade-off between leakage current and forward voltage drop K Low leakage current Avalanche capability rated ECOPACK 2 compliant A2 Applications K A1 Switching diode TO-220AB SMPS DC/DC converter LED lighting Description The STPS16150C is a dual center tap Schottky rectifier suited for high frequency switch mode power supply. Available in TO-220AB, this device is optimized for use in LCD screens or adaptors providing such applications with good efficiency at both low and high load. Product status link STPS16150C Product summary I 2 x 8 A F(AV) V 150 V RRM T 175 C j V (typ.) 0.70 V F DS2251 - Rev 3 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STPS16150C Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values per diode at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 150 V RRM I Forward rms current 20 A F(RMS) Per diode 8 I T = 150 C Average forward current, = 0.5, square wave A F(AV) c Per device 16 I Surge non repetitive forward current t = 10 ms sinusoidal 150 A FSM p P Repetitive peak avalanche power t = 10 s, T = 125 C 338 W ARM p j T Storage temperature range -65 to +175 C stg (1) T Maximum operating junction temperature 175 C j 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameters Symbol Parameter Max. value Unit Per diode 3 R Junction to case C/W th(j-c) Total 1.8 R Coupling 0.6 C/W th(c) When the diodes 1 and 2 are used simultaneously: T = P x R (per diode) + P x R j (diode1) (diode1) th(j-c) (diode2) th(c) For more information, please refer to the following application note : AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 3.0 A j (1) I Reverse leakage current V = V R R RRM T = 125 C - 4.0 mA j T = 25 C - 0.92 j I = 8 A F T = 125 C - 0.70 0.75 j (2) V Forward voltage drop V F T = 25 C - 1 j I = 16 A F T = 125 C - 0.80 0.86 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t =380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.64 x I + 0.014 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses : AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses on a power diode DS2251 - Rev 3 page 2/9