STPS30M60DJF-TR STMicroelectronics

STPS30M60DJF High efficiency power Schottky diode Datasheet production data Features A Very low conduction losses Low forward voltage drop K Low thermal resistance High specified avalanche capability A High integration ECOPACK 2 compliant component K K Description The STPS30M60DJF is a power Schottky rectifier, suited for high frequency switch mode power supply and DC to DC converters. Packaged in PowerFLAT, this device is A A intended to be used in notebook, game station and desktop adapters, providing in these PowerFLAT 5x6 applications a good efficiency at both low and STPS30M60DJF high load. Its low profile was especially designed to be used in applications with space-saving Table 1. Device summary constraints. Symbol Value I 30 A F(AV) V 60 V RRM V (typ) 0.46 V F T (max) 150 C j TM: PowerFLAT is a trademark of STMicroelectronics April 2012 Doc ID 023120 Rev 1 1/8 This is information on a product in full production. www.st.com 8Characteristics STPS30M60DJF 1 Characteristics Table 2. Absolute ratings (limiting values, anode terminals 1 and 3 short circuited) Symbol Parameter Value Unit V Repetitive peak reverse voltage 60 V RRM I Forward rms current 45 A F(RMS) I Average forward current = 0.5 T = 100 C 30 A F(AV) c I Surge non repetitive forward current t = 10 ms sinusoidal 250 A FSM p (1) P Repetitive peak avalanche power 3500 W ARM Maximum repetitive peak avalanche t < 1 s, T < 150 C p j V 80 V ARM voltage I < 13 A AR T Storage temperature range -65 to +175 C stg (2) T Maximum operating junction temperature 150 C j 1. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the STMicroelectronics application notes AN1768 and AN2025. 1 dPtot < 2. condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistance Symbol Parameter Value Unit R Junction to case 2.0 C/W th(j-c) Table 4. Static electrical characteristics (anode terminals short circuited) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - - 90 A Reverse leakage j (1) I V = V R R RRM current T = 125 C - 20 50 mA j T = 25 C - - 0.59 j I = 15 A F T = 125 C - 0.46 0.52 j (2) V Forward voltage drop V F T = 25 C - - 0.72 j I = 30 A F T = 125 C - 0.57 0.67 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.55 x I + 0.004 x I F(AV) F (RMS) 2/8 Doc ID 023120 Rev 1