T1210T-8FP STMicroelectronics

T1210T-8FP 12 A logic level Triac Datasheet production data Description Available in through-hole fullpack package, the T1210T-8FP Triac can be used for the on/off or phase angle control function in general purpose AC switching. This device can be directly driven * by a microcontroller thanks to its 10 mA gate current requirement. Provide UL certified insulation rated at 2000 VRMS. Table 1. Device summary Symbol Value Unit I 12 A T(rms) * V , V 800 V DRM RRM % 2 )3 7 V , V 900 V DSM RSM I 10 mA GT Features Three triggering quadrants Triac ECOPACK 2 compliant component Complies with UL insulation safety standards (File ref: E81734) High performance Triac: High T family j High dI/dt family High dV/dt family Insulated package TO-220FPAB: Insulated voltage: 2000 VRMS Applications General purpose AC line load switching Motor control circuits Small home appliances Lighting control Inrush current limiting circuits Overvoltage crowbar protection February 2015 DocID025747 Rev 2 1/9 This is information on a product in full production. www.st.com 9Characteristics T1210T-8FP 1 Characteristics Table 2. Absolute maximum ratings (T = 25 C unless otherwise stated) j Symbol Parameter Value Unit I On-state rms current (full sine wave) T = 99 C 12 A T(rms) c F = 50 Hz t = 20 ms 90 Non repetitive surge peak on-state I A TSM current (full cycle, T initial = 25 C) j F = 60 Hz t = 16.7 ms 95 ItI t value for fusing, T initial = 25 C t = 10 ms 54 A s j p T = 150 C 600 j V , DRM Repetitive surge peak off-state voltage V V RRM T = 125 C 800 j V , DSM Non repetitive surge peak off-state voltage t = 10 ms 900 V p V RSM Critical rate of rise of on-state dI/dt F = 100 Hz 100 A/s current I = 2 x I , t 100 ns G GT r I Peak gate current t = 20 s T = 150 C 4 A GM p j P Average gate power dissipation T = 150 C 1 W G(AV) j T Storage junction temperature range - 40 to + 150 stg C T Operating junction temperature range - 40 to + 150 j T Maximum lead temperature for soldering during 10 s 260 C L V Insulation rms voltage, 1 minute 2 kV ins Table 3. Electrical characteristics (T = 25 C, unless otherwise stated) j Symbol Test conditions Quadrant Value Unit Min. 0.5 (1) I V = 12 V, R = 30 I - II - III mA GT D L Max. 10 V V = 12 V, R = 30 I - II - III Max. 1.3 V D L GT V V = V , R = 3.3 k , T = 150 C I - II - III Min. 0.2 V GD D DRM L j (1) I I = 500 mA Max. 15 mA H T I - III Max. 20 mA I I = 1.2 I L G GT II Max. 25 mA T = 125 C V = V = 536 V, gate open 250 V/s j D R (1) dV/dt Min. V = V = 402 V, gate open T = 150 C 170 V/s j D R T = 125 C 11.7 j (1) (dI/dt)c (dV/dt)c = 0.1 V/s Min. A/ms T = 150 C 8.2 j T = 125 C 6 j (1) (dI/dt)c (dV/dt)c = 10 V/s Min. A/ms = 150 C 2.7 T j 1. For both polarities of A2 referenced to A1 2/9 DocID025747 Rev 2