AVS10CB STMicroelectronics

AVS10 AUTOMATIC VOLTAGE SWITCH (SMPS < 300W) CONTROLLER n 50/60Hz FULL COMPATIBILITY n INTEGRATED VOLTAGE REGULATOR n TRIGGERING PULSE TRAIN OF THE TRIAC n PARASITIC FILTER A2 n LOW POWER CONSUMPTION TRIAC G A2 A1 n HIGH EFFICIENCY AND SAFETY SWITCHING n UNINSULATED PACKAGE : AVS10CB n INSULATED PACKAGE 2500V( ) : AVS10CBI AVS1ACP08 RMS AVS10CB DIP-8 TO-220AB n V = 600 V DRM n I :8A T(RMS) PIN CONNECTION DESCRIPTION The AVS10 kit is an automatic mains selector (110/220V AC) to be used in SMPS < 300 W. It is composed of 2 devices : n The Controller is optimized for low VSS 1 8 VM consumption and high security triggering of the triac. When connected to V , the mode input SS activates an additional option. If the main Osc / In 2 7 Mode power drops from 220V to 110V, the triac control remains locked to the 220V mode and avoids any high voltage spike when the voltage Osc / Out 3 6 N.C. is restored to 220V. When connected to V , the mode input DD desactivates this option. VDD 4 5 VG n The TRIAC is specially designed for this application. An optimization between sensitivity and dynamic parameters of the triac gate highly reduces the losses of supply resistor and allows excellent immunity against disturbances. January 2001 - Ed: 3B 1/8AVS10 BLOCK DIAGRAM AVS1ACP08 MODE AVS10CB or AVS10CBI Supply Reset A2 Mains mode Peak Voltage Parasitic Controller Q CP Detector Filter Zero Crossing Detector S Triggering Q Time CP Controller OSC/IN A1 Oscillator OSC/OUT ABSOLUTE MAXIMUM RATINGS CONTROLLER AVS1ACP08 Value Symbol Parameter Unit Min. Max. V Supply voltage -12 0.5 V SS V /V I / O voltage V -0.5 0.5 V I O SS I /I I / O current -40 +40 mA I O Tstg Storage Temperature -60 +150 C Toper Operating Temperature code C 0 +70 C TRIAC AVS10CB / AVS10CBI T = +25C (unless otherwise specified) j Symbol Parameter Value Unit V Repetitive peak off-state voltage (2) 600 V DRM I RMS on-state current AVS10CB T = 80C 8 A T(RMS) C (360 conduction angle) AVS10CBI T = 70C C I Non repetitive surge peak on-state current ( T initial = 25C ) t = 8.3ms 85 A TSM j t = 10ms 80 2 2 2 ItI t value t = 10ms 32 A s dI / dt Critical rate of rise of on-state current (1) Repetitive 20 A/s F = 50Hz Non 100 Repetitive dV/dt * Linear slope up to 0.67 V Gate open Tj = 110C 50 V/s DRM T Storage Temperature - 40 + 150 C stg T Junction Temperature Range 0 + 125 j (1) Gate supply : I = 100mA di/dt = 1A s * For either polarity of electrode A2 voltage with reference to electrode A1 G / (2) T = 110C j 2/8