TXDV1212RG STMicroelectronics

TXDVxx12 12 A high voltage Triacs Features A2 On-state current (I ): 12 A T(RMS) Max. blocking voltage (V /V ): 1200 V DRM RRM Gate current (I ): 100 mA G GT Commutation 10 V/s: up to 42.5 A/ms A1 Noise immunity: 2 kV/s Insulated package: 2,500 V rms (UL recognized: E81734). Description A1 A2 The TXDVxx12 series uses a high performance G alternistor technology. TO-220AB Featuring very high commutation levels and high insulated surge current capability, these devices are well adapted to power control for inductive and resistive loads (motor, transformer...) especially on three-phase power grid. Targeted three-phase applications include heating systems, motor starters, and induction motor speed control (especially for fans). Table 1. Device summary Parameter TXDV812RG TXDV1212RG Blocking voltage V /V 800 V 1200 V DRM RRM On-state current I 12 A T(RMS) Gate current I 100 mA GT January 2012 Doc ID 18272 Rev 2 1/7 www.st.com 7Characteristics TXDVxx12 1 Characteristics Table 2. Absolute maximum ratings (limiting values) Symbol Parameter Value Unit I On-state rms current (180 conduction angle) T = 90 C 12 A T(RMS) c TXDV812 800 V V DRM Repetitive peak off-state voltage T = 125 C j V TXDV1212 1200 RRM t = 2.5 ms 170 p I Non repetitive surge peak on-state current t = 8.3 ms T = 25 C 125 A TSM p j t = 10 ms 120 p 2 2 2 ItI t value for fusing t = 10 ms 72 A S p Critical rate of rise of on-state current dI/dt F = 50 Hz 100 A/s I = 500 mA dI /dt = 1 A/s G G T Storage junction temperature range - 40 to + 150 stg C T Operating junction temperature range - 40 to + 125 j (1) V Insulation rms voltage 2500 V INS(RMS) 1. A1, A2, gate terminals to case for 1 minute Table 3. Electrical characteristics (T = 25 C, unless otherwise specified) j Value Unit Symbol Test conditions Quadrant TXDV812 TXDV1212 I I-II-III MAX. 100 mA GT V = 12 V DC, R = 33 D L V I-II-III MAX. 1.5 V GT V V = V R = 3.3 k T = 110 C I-II-III MIN. 0.2 V GD D DRM L j t V = V I = 500 mA dI /dt = 3 A/s I-II-III TYP. 2.5 s gt D DRM G G I-III 100 I I = 1.2 x I TYP. mA L G GT II 200 (1) I I = 500 mA Gate open MAX. 100 mA H T Linear slope up to: (1) dV/dt T = 125 C MIN. 2 kV/s j V = 67% V Gate open D DRM (1) (dI/dt)c (dV/dt)c = 10 V/s T = 110 C MIN. 42.5 30 A/ms j (1) V I = 17 A t = 380 s MAX. 1.95 V TM TM p (1) V Threshold voltage MAX. 1.21 V to (1) R Dynamic resistance MAX. 40 m d T = 25 C 0.01 I j DRM V = V MAX. mA DRM RRM I T = 110 C 2 5 RRM j 1. For either polarity of electrode A voltage with reference to electrode A . 2 1 2/7 Doc ID 18272 Rev 2