X-On Electronics has gained recognition as a prominent supplier of TXDV1212RG SCRs across the USA, India, Europe, Australia, and various other global locations. TXDV1212RG SCRs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

TXDV1212RG STMicroelectronics

TXDV1212RG electronic component of STMicroelectronics
TXDV1212RG STMicroelectronics
TXDV1212RG SCRs
TXDV1212RG  Semiconductors

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See Product Specifications
Part No. TXDV1212RG
Manufacturer: STMicroelectronics
Category: SCRs
Description: Triac; 1.2kV; 12A; 100mA; THT; alternistor, high voltage; tube
Datasheet: TXDV1212RG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
55: USD 4.7295 ea
Line Total: USD 260.12 
Availability - 2522
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ: 55  Multiples: 1
Pack Size: 1
Availability Price Quantity
15
Ship by Fri. 25 Jul to Wed. 30 Jul
MOQ : 1
Multiples : 1
1 : USD 6.4698
10 : USD 4.1692
30 : USD 4.0516
100 : USD 3.7547
500 : USD 3.7006
1000 : USD 3.6744

64
Ship by Wed. 16 Jul to Fri. 18 Jul
MOQ : 1
Multiples : 1
1 : USD 4.536
3 : USD 4.074
7 : USD 3.122
18 : USD 2.954

2522
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ : 55
Multiples : 1
55 : USD 4.7295
74 : USD 3.5594
106 : USD 2.4659
107 : USD 2.4414
115 : USD 2.2712
250 : USD 2.1632
500 : USD 1.9199

6790
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ : 168
Multiples : 1
168 : USD 2.7969
500 : USD 2.6406
1000 : USD 2.5
10000 : USD 2.3437

2619
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ : 168
Multiples : 1
168 : USD 2.7969
500 : USD 2.6406
1000 : USD 2.5
10000 : USD 2.3437

16393
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ : 168
Multiples : 1
168 : USD 2.7969
500 : USD 2.6406
1000 : USD 2.5
10000 : USD 2.3437

   
Manufacturer
Product Category
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Mounting Style
Package / Case
Packaging
Series
Minimum Operating Temperature
Maximum Operating Temperature
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TXDV1212RG from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TXDV1212RG and other electronic components in the SCRs category and beyond.

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TXDVxx12 12 A high voltage Triacs Features A2 On-state current (I ): 12 A T(RMS) Max. blocking voltage (V /V ): 1200 V DRM RRM Gate current (I ): 100 mA G GT Commutation 10 V/s: up to 42.5 A/ms A1 Noise immunity: 2 kV/s Insulated package: 2,500 V rms (UL recognized: E81734). Description A1 A2 The TXDVxx12 series uses a high performance G alternistor technology. TO-220AB Featuring very high commutation levels and high insulated surge current capability, these devices are well adapted to power control for inductive and resistive loads (motor, transformer...) especially on three-phase power grid. Targeted three-phase applications include heating systems, motor starters, and induction motor speed control (especially for fans). Table 1. Device summary Parameter TXDV812RG TXDV1212RG Blocking voltage V /V 800 V 1200 V DRM RRM On-state current I 12 A T(RMS) Gate current I 100 mA GT January 2012 Doc ID 18272 Rev 2 1/7 www.st.com 7Characteristics TXDVxx12 1 Characteristics Table 2. Absolute maximum ratings (limiting values) Symbol Parameter Value Unit I On-state rms current (180 conduction angle) T = 90 C 12 A T(RMS) c TXDV812 800 V V DRM Repetitive peak off-state voltage T = 125 C j V TXDV1212 1200 RRM t = 2.5 ms 170 p I Non repetitive surge peak on-state current t = 8.3 ms T = 25 C 125 A TSM p j t = 10 ms 120 p 2 2 2 ItI t value for fusing t = 10 ms 72 A S p Critical rate of rise of on-state current dI/dt F = 50 Hz 100 A/s I = 500 mA dI /dt = 1 A/s G G T Storage junction temperature range - 40 to + 150 stg C T Operating junction temperature range - 40 to + 125 j (1) V Insulation rms voltage 2500 V INS(RMS) 1. A1, A2, gate terminals to case for 1 minute Table 3. Electrical characteristics (T = 25 C, unless otherwise specified) j Value Unit Symbol Test conditions Quadrant TXDV812 TXDV1212 I I-II-III MAX. 100 mA GT V = 12 V DC, R = 33 D L V I-II-III MAX. 1.5 V GT V V = V R = 3.3 k T = 110 C I-II-III MIN. 0.2 V GD D DRM L j t V = V I = 500 mA dI /dt = 3 A/s I-II-III TYP. 2.5 s gt D DRM G G I-III 100 I I = 1.2 x I TYP. mA L G GT II 200 (1) I I = 500 mA Gate open MAX. 100 mA H T Linear slope up to: (1) dV/dt T = 125 C MIN. 2 kV/s j V = 67% V Gate open D DRM (1) (dI/dt)c (dV/dt)c = 10 V/s T = 110 C MIN. 42.5 30 A/ms j (1) V I = 17 A t = 380 s MAX. 1.95 V TM TM p (1) V Threshold voltage MAX. 1.21 V to (1) R Dynamic resistance MAX. 40 m d T = 25 C 0.01 I j DRM V = V MAX. mA DRM RRM I T = 110 C 2 5 RRM j 1. For either polarity of electrode A voltage with reference to electrode A . 2 1 2/7 Doc ID 18272 Rev 2

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8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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