USBULC6-2M6 STMicroelectronics

USBULC6-2M6 Ultra large bandwidth ESD protection Features 2 data line 15 kV ESD protection Protects 5 V V when applicable BUS Ultra low capacitance: 0.65 pF at F = 240 MHz Very low leakage current: 0.5 A max. Fast response time compared with varistors QFN QFN 6 lead package (pin view) RoHS compliant Figure 1. Functional diagram (top view) Benefits ESD protection of V (when applicable) BUS High bandwidth to minimize impact on data signal quality Low PCB space occupation Low leakage current profides longer operation of battery powered devices Higher reliability offered by monolithic integration Complies with these standards: IEC 61000-4-2 level 4 Description 15 kV air discharge 8 kV contact discharge The USBULC6-2M6 is a monolithic, application specific discrete device dedicated to ESD Applications protection of high speed interfaces. Its ultra low line capacitance provides high USB 2.0 ports including Hi-Speed USB ports bandwidth and secures a high level of signal up to 480 Mb/s as well as full and low speed integrity without compromizing the protection of USB ports downstream sensitive chips against the most Ethernet port: 10/100/1000 Mb/s stringent characterized ESD strikes. Video line protection Portable electronics November 2007 Rev 1 1/10 www.st.comCharacteristics USBULC6-2M6 1 Characteristics Table 1. Absolute ratings Symbol Parameter Value Unit IEC 61000-4-2 air discharge 15 V Peak pulse voltage IEC 61000-4-2 contact discharge 15 kV PP MIL STD883G-Method 3015-7 25 T Storage temperature range -55 to +150 C stg T Maximum junction temperature 150 C j T Lead solder temperature (10 seconds duration) 260 C L Table 2. Electrical characteristics (T = 25 C) amb Value Symbol Parameter Test conditions Unit Min. Typ. Max I Leakage current V = 5 V 0.5 A RM RM Breakdown voltage between V BUS V I = 1 mA 6 V BR R and GND I = 1 A, t = 8/20 s PP p 12 V Any I/O pin to GND V Clamping voltage CL I = 5 A, t = 8/20 s PP p 17 V Any I/O pin to GND V = 0 V, F = 1 MHz R 0.95 1.1 Any I/O pin to ground C Capacitance between I/O and GND i/o-GND V = 0 V, F = 240 MHz R 0.65 0.85 Any I/O pin to ground Capacitance variation between I/O V = 0 V, F = 1 MHz R C 0.020 pF i/o-GND and GND Any I/O pin to ground V = 0 V, F = 1 MHz R 0.5 0.55 Ground not connected C Capacitance between I/O i/o-i/o V = 0 V, F = 240 MHz R 0.35 0.4 Ground not connected 2/10