VNV35N07-E STMicroelectronics

VNP35N07-E, VNB35N07-E, VNV35N07-E OMNIFET: fully autoprotected Power MOSFET Datasheet - production data Diagnostic feedback through input pin ESD protection Direct access to the gate of the Power MOSFET (analog driving) 3 3 1 2 1 Compatible with standard Power MOSFET TO-220 D2PAK Standard TO-220 package Compliant with 2002/95/EC European directive 10 Description 1 PowerSO-10 The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower technology, Features intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh Type V R I clamp DS(on) lim environments. VNP35N07-E 70 V 0.028 35 A Fault feedback can be detected by monitoring the VNB35N07-E 70 V 0.028 35 A voltage at the input pin. VNV35N07-E 70 V 0.028 35 A Automotive qualified Linear current limitation Thermal shutdown Short circuit protection Integrated clamp Low current drawn from input pin Table 1. Device summary Order codes Package Tube Tape and reel TO-220 VNP35N07-E VNP35N07TR-E 2 D PAK VNB35N07-E VNB35N07TR-E PowerSO-10 VNV35N07-E VNV35N07TR-E February 2015 DocID023779 Rev 3 1/24 This is information on a product in full production. www.st.comContents VNP35N07-E, VNB35N07-E, VNV35N07-E Contents 1 Block diagram 5 2 Electrical specification . 6 2.1 Absolute maximum rating 6 2.2 Thermal data . 6 2.3 Electrical characteristics . 7 3 Protection features . 16 4 Package information 17 4.1 TO-220 package information 17 2 4.2 D PAK package information . 19 4.3 PowerSO-10 mechanical data . 21 5 Revision history . 23 2/24 DocID023779 Rev 3