SMBJ33CATR Synsemi

SMBJ Transil Features Peak pulse power: 600 W (10/1000 s) A 4 kW (8/20 s) Stand off voltage range: from 5 V to 188 V Unidirectional and bidirectional types K Unidirectional Bidirectional Low leakage current: SMB 0.2 A at 25 C (JEDEC DO-214AA) 1 A at 85 C Operating T : 150 C jmax High power capability at T : jmax 515 W (10/1000 s) Description JEDEC registered package outline The SMBJ Transil series has been designed to Complies with the following standards protect sensitive equipment against electrostatic IEC 61000-4-2 level 4: discharges according to IEC 61000-4-2, and MIL STD 883, method 3015, and electrical over 15 kV (air discharge) stress according to IEC 61000-4-4 and 5. These 8 kV (contact discharge) devices are more generally used against surges IEC 61000-4-5 below 600 W (10/1000 s). MIL STD 883G, method 3015-7 Class 3B: Planar technology makes these devices suitable 25 kV HBM (human body model) for high-end equipment and SMPS where low Resin meets UL 94, V0 leakage current and high junction temperature are required to provide reliability and stability over MIL-STD-750, method 2026 soldererability time. EIA STD RS-481 and IEC 60286-3 packing SMBJ are packaged in SMB (SMB footprint in IPC 7531 footprint accordance with IPC 7531 standard). TM: Transil is a trademark of STMicroelectronics October 2010 Doc ID 5616 Rev 10 1/10 www.st.com 10 Characteristics SMBJ 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit (1) P Peak pulse power dissipation T initial = T 600 W PP j amb T Storage temperature range -65 to +150 C stg T Operating junction temperature range -55 to +150 C j T Maximum lead temperature for soldering during 10 s. 260 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Table 2. Thermal resistances Symbol Parameter Value Unit R Junction to leads 20 C/W th(j-l) R Junction to ambient on recommended pad layout 100 C/W th(j-a) Figure 1. Electrical characteristics - definitions II II Symbol Parameter II II FF PPPP Unidirectional V Stand-off voltage RM V Breakdown voltage BR V Clamping voltage CL II RR VV VV VV VV FF VV CLCL BRBR RMRM VV VV VV VV I Leakage current V CLCL BRBR RMRM II RM RM RMRM II I Peak pulse current RMRM II PP RMRM VV VV VV RMRM BRBR CLCL II II RR RR T Voltage temperature coefficient V Forward voltage drop F Bidirectional R Dynamic resistance D II PPPP II PPPP Figure 2. Pulse definition for electrical characteristics % Ipp Repetitive pulse current t = rise time (s) r 100 t = pulse duration time (s) p 50 t 0 t t r p 2/10 Doc ID 5616 Rev 10