X-On Electronics has gained recognition as a prominent supplier of 1N4448W Zener Diodes across the USA, India, Europe, Australia, and various other global locations. 1N4448W Zener Diodes are a product manufactured by Taitron. We provide cost-effective solutions for Zener Diodes, ensuring timely deliveries around the world.

1N4448W Taitron

1N4448W electronic component of Taitron
1N4448W Taitron
1N4448W Zener Diodes
1N4448W  Semiconductors

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See Product Specifications
Part No. 1N4448W
Manufacturer: Taitron
Category: Zener Diodes
Description: Zener Diodes Switching diode 400 mW
Datasheet: 1N4448W Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0304 ea
Line Total: USD 91.2 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Mon. 07 Apr to Fri. 11 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.0304
6000 : USD 0.0294
12000 : USD 0.0276
24000 : USD 0.0268

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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We are delighted to provide the 1N4448W from our Zener Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N4448W and other electronic components in the Zener Diodes category and beyond.

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1N4148W/1N4448W/1N914BW Taiwan Semiconductor Small Signal Product 400mW High Speed SMD Switching Diode FEATURES - Fast switching device (trr<4.0ns) - Surface Mount Device Type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix means green compound (halogen-free) SOD-123F MECHANICAL DATA - Case: Flat lead SOD-123F small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260C/10s - Polarity: Indicated by cathode band - Weight: 8.85 0.5mg MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER VALUE SYMBOL UNIT Power Dissipation P 400 mW D Reverse Voltage V 100 V R Repetitive Peak Reverse Voltage V 75 V RRM Repetitive Peak Forward Current I 300 mA FRM Forward Current I 150 mA F o Thermal Resistance (Junction to Ambient) (Note 1) R 450 JA C/W o Junction and Storage Temperature Range T , T -65 to +150 J STG C PARAMETER SYMBOL MIN MAX UNIT I =100A 100 - R Reverse Voltage V V R I =5A 75 - R Forward Voltage I =5.0mA 0.62 0.72 1N4448W, 1N914BW F V V F I =10.0mA 1N4148W -1.0 F I =100.0mA 1N4448W, 1N914BW -1.0 F V =20V -25 R nA I Reverse Leakage Current R V =75V -5.0 A R Junction Capacitance V =0, f=1.0MHz C -4.0 pF R J Reverse Recovery Time (Note 2) t -4.0 ns rr Notes 1: Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load Notes 2: Reverse Recovery Test Conditions : I =10mA, I =60mA, R =100, I =1mA F R L RR Document Number: DS S1412035 Version: I141N4148W/1N4448W/1N914BW Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A Fig. 2 Reverse Current vs Reverse Voltage Fig.1 Typical Forward Characteristics 100 100 10 10 1 1 0. 1 0. 1 0. 01 0. 01 0. 001 0 20 40 60 80 100 120 0 0. 2 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 Instantaneous Forward Volatge (V) Reverse Volatge (V) Fig. 4 Typical Junction Capacitance Fig. 3 Admissible Power Dissipation 6 500 5 400 4 300 3 200 2 100 1 0 0 0 20 40 60 80 100 120 140 160 02468 10 Reverse Voltage (V) Ambient Temperature (C) Fig. 5 Forward Resistance vs. Forward Current 10000 1000 100 10 1 0. 01 0. 1 1 10 100 Forward Current (mA) Document Number: DS S1412035 Version: I14 Power Dissipation (mW) Instantaneous Forward Current(A) Dynamic Forward Resistance () Reverse Current (A) Junction Capacitance (pF)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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