X-On Electronics has gained recognition as a prominent supplier of 1N4448WS RR Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. 1N4448WS RR Diodes - General Purpose, Power, Switching are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

1N4448WS RR Taiwan Semiconductor

1N4448WS RR electronic component of Taiwan Semiconductor
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Part No.1N4448WS RR
Manufacturer: Taiwan Semiconductor
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching SOD-323F, 100V, 1A, Switching Diode & Array
Datasheet: 1N4448WS RR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1835 ea
Line Total: USD 0.18 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1835
10 : USD 0.1319
100 : USD 0.0707
1000 : USD 0.0381
3000 : USD 0.0244
9000 : USD 0.0217

0
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 6000
Multiples : 3000
6000 : USD 0.0253
12000 : USD 0.0243

   
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Product Category
RoHS - XON
Icon ROHS
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We are delighted to provide the 1N4448WS RR from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N4448WS RR and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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1N4148WS/1N4448WS/1N914BWS Taiwan Semiconductor 200mW High Speed SMD Switching Diode FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement V 100 V RRM High surge current capability V at I =100mA 1.0 V Moisture sensitivity level: level 1, per J-STD-020 F F Compliant to RoHS directive 2011/65/EU and T MAX. 150 C J in accordance to WEEE 2002/96/EC Package SOD-323F Halogen-free according to IEC 61249-2-21 Configuration Single die APPLICATIONS Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter MECHANICAL DATA Case: SOD-323F Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: Indicated by cathode band Weight: 4.85 0.5 mg ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A 1N4148 1N4448 1N914B PARAMETER SYMBOL UNIT WS WS WS Marking code on the device S1 S2 S3 Power dissipation P 200 mW D Repetitive peak reverse voltage V 100 V RRM Forward current I F 150 mA Non-repetitive peak forward current I 300 mA FRM Junction temperature range T -65 to +150 C J Storage temperature range T -65 to +150 C STG THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance R 625 C/W JA 1 Version: L1804 1N4148WS/1N4448WS/1N914BWS Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN MAX UNIT 1N4448WS,1N914BWS 0.62 0.72 I = 5 mA, T = 25C F J 1N4148WS (1) - 1.00 Forward voltage V V F I =10 mA, T = 25C F J 1N4448WS,1N914BWS - 1.00 I =100 mA, T = 25C F J 75 - I = 5A, T = 25C R J Reverse voltage V V R - 100 I = 100A, T = 25C R J - 25 V = 20V T = 25C nA R J (2) Reverse current rated V I R R - 5 V = 75V T = 25C A R J 4 1 MHz, V =0V - Junction capacitance R C pF J I =10mA, I =60mA, R =100, F R L 4 - Reverse recovery time t ns rr I =1mA RR Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION PART NO. PACKAGE PACKING 1N4148WS RRG SOD-323F 3K / 7 Reel 1N4148WS RR SOD-323F 3K / 7 Reel 1N4148WS R9G SOD-323F 10K / 13 Reel 1N4148WS R9 SOD-323F 10K / 13 Reel 1N4448WS RRG SOD-323F 3K / 7 Reel 1N4448WS RR SOD-323F 3K / 7 Reel 1N4448WS R9G SOD-323F 10K / 13 Reel 1N4448WS R9 SOD-323F 10K / 13 Reel 1N914BWS RRG SOD-323F 3K / 7 Reel 1N914BWS RR SOD-323F 3K / 7 Reel 1N914BWS R9G SOD-323F 10K / 13 Reel 1N914BWS R9 SOD-323F 10K / 13 Reel 2 Version: L1804

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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