X-On Electronics has gained recognition as a prominent supplier of 1N5822 R0 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. 1N5822 R0 Schottky Diodes & Rectifiers are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

1N5822 R0 Taiwan Semiconductor

1N5822 R0 electronic component of Taiwan Semiconductor
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See Product Specifications
Part No.1N5822 R0
Manufacturer: Taiwan Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 3A 40V Schottky Rect ifier
Datasheet: 1N5822 R0 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5267 ea
Line Total: USD 0.53 
Availability - 17
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
17
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5267
10 : USD 0.4401
100 : USD 0.3003
500 : USD 0.238
1000 : USD 0.2033
2500 : USD 0.1767
10000 : USD 0.1732
25000 : USD 0.1698
50000 : USD 0.1687

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Height
Length
Operating Temperature Range
Width
Hts Code
Product Type
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 1N5822 R0 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N5822 R0 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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1N5820 - 1N5822 Taiwan Semiconductor CREAT BY ART 3A, 20V - 40V Schottky Barrier Rectifiers FEATURES - Low forward voltage drop - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 MECHANICAL DATA Case: DO-201AD Molding compound, UL flammability classification rating 94V-0 DO-201AD Part no. with suffix means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) Terminal: Pure tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 1.10g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER 1N5820 1N5821 1N5822 SYMBOL UNIT Maximum repetitive peak reverse voltage V 20 30 40 V RRM Maximum RMS voltage V 14 21 28 V RMS Maximum DC blocking voltage V 20 30 40 V DC I Maximum average forward rectified current 3 A F(AV) Peak forward surge current, 8.3 ms single half sine-wave I 70 A FSM superimposed on rated load Maximum instantaneous forward voltage (Note 1) V 0.475 0.500 0.525 V F 3 A T =25C 0.5 J Maximum reverse current rated V I mA R R T =100C 10 J Typical Junction Capacitance (Note 2) C 200 pF J Typical thermal resistance R 40 C/W JA Operating junction temperature range T - 55 to +125 C J Storage temperature range T - 55 to +125 C STG Note 1: Pulse test with PW=300 s, 1% duty cycle Note 2: Measure at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. Document Number: D1307015 Version: H151N5820 - 1N5822 Taiwan Semiconductor ORDERING INFORMATION PACKING CODE PART NO. PART NO. PACKING PACKAGE PACKING (*) SUFFIX CODE SUFFIX A0 DO-201AD 500 / Ammo box R0 DO-201AD 1,250 / 13 Paper reel 1N582x H G (Note 1) B0 DO-201AD 500 / Bulk packing X0 DO-201AD Forming Note 1: defines voltage from 20V (1N5820) to 40V (1N5822) *: Optional available EXAMPLE PART NO. PACKING CODE PREFERRED P/N PART NO. PACKING CODE DESCRIPTION SUFFIX SUFFIX AEC-Q101 qualified 1N5820HA0G 1N5820 HA0 G Green compound RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A FIG.1 MAXIMUM FORWARD CURRENT FIG. 2 MAXIMUM NON-REPETITIVE FORWARD DERATING CURVE SURGE CURRENT 4 80 70 8.3ms Single Half Sine Wave 3 60 50 2 40 RESISTIVE OF 1 30 INDUCTIVE LOAD 20 0 10 0 20 40 60 80 100 120 140 1 10 100 o LEAD TEMPERATURE ( C) NUMBER OF CYCLES AT 60 Hz FIG. 4 TYPICAL REVERSE CHARACTERISTICS FIG. 3- TYPICAL FORWARD CHARACTERISTICS 10 100 T =100C J 1 1N5820 10 0. 1 T =75C J 1N5821-1N5822 1 0. 01 T =25C J Pulse Width=300s 1% Duty Cycle 0. 001 0. 1 0 20 40 60 80 100 120 140 0. 2 0. 3 0. 4 0. 5 0. 6 0. 7 0. 8 0. 9 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document Number: D1307015 Version: H15 INSTANTANEOUS FORWARD A AVERAGE FORWARD A CURRENT (A) CURRENT (A) PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE A CURRENT (mA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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