BAT42WS Taiwan Semiconductor

BAT42 / BAT43 200 mW Hermetically Sealed Glass Fast RoRoHSHS Pb COCOMMPPLLIIAANNCECE Switching Schottky Barrier Diode DO-35 Features Low forward voltage drop DO-35 package (JEDEC) Through-hole device type mounting Hermetically sealed glass Compression bonded construction All external surface are corrosion resistant and leads are readily solderable RoHS compliant Solder hot dip Tin(Sn) lead finish Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics o Rating at 25 Cambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol BAT42/BAT43 Units Power Dissipation Pd 200 mW Repetitive Peak Reverse Voltage V 30 V RRM Maximum DC Blocking Voltage V 30 V R Average Forward Rectified Current 200 mA I F(AV) Peak Forward Surge Current I 4.0 A FSM o Operating and Storage Temperature Range T , T -65 to + 125 C J STG Electrical Characteristics Type Number Symbol Min Max Units B 30 V Breakdown Voltage I =100uA V R Forward Voltage Drop All Types BAT42 IF=200mA 1.0 BAT42 IF=10mA 0.40 BAT42 IF= 50mA 0.65 V V F BAT43 IF=200mA 1.0 BAT43 IF =2.0mA 0.26 0.33 BAT43 IF=15mA 0.45 Maximum Peak Reverse Current VR=25V 500 nA I R Junction Capacitance VR=1V, f=1.0MHz Cj 7(Typ.) pF Reverse Recovery Time (Note 1) trr 5.0 (Typ.) nS Note: 1. Reverse Recovery Test Conditions: I =I =10mA, I =1mA, R =100. F R RR L Version: A07 RATINGS AND CHARACTERISTIC CURVES (BAT42 /BAT43) Fig. 1 Admissible Power Dissipation vs. Ambient Temperature Fig. 2 Typical Reverse Characteristics 250 1000 100 200 --40C 125C 150 10 25C 100 1 50 0.1 0 0.01 05250 75 100 125 150 175 200 0 200 400 600 800 1000 1200 T -- Ambient Temperature (C) V -- Instantaneous Forward Voltage (mV) A F Fig. 3 Typical Reverse Fig. 4 Typical Capacitance Characteristics vs. Reverse Applied Voltage 18 1000 125C 16 100 14 100C 12 75C 10 10 50C 8 1 6 25C 4 0.1 2 0.01 0 010 20 30 40 50 02100 30 40 50 60 V -- Reverse Voltage (V) V -- Reverse Voltage (V) R R P -- Power Dissipation (mW) tot I -- Reverse Leakage Current (A) R Capacitance (pF) I -- Forward Current (mA) F