BAT42 / BAT43 Taiwan Semiconductor 200mW , Hermetically Sealed Glass Fast Switching Schottky Barrier Diodes FEATURES KEY PARAMETERS Hermetically sealed glasss PARAMETER VALUE UNIT Compliant to RoHS directive 2011/65/EU and P 200 mW D in accordance to WEEE 2002/96/EC V 30 V RRM Halogen-free according to IEC 61249-2-21 I 4 A FSM APPLICATIONS V at I =200mA 1 V F F Adapters T Max. 125 C J For switching power supply Low stored charge Package DO-35 Inverter Configuration Single die MECHANICAL DATA Case: DO-35 Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: Indicated by cathode band ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL BAT42 BAT43 UNIT Power dissipation P 200 mW D Repetitive peak reverse voltage V 30 V RRM Maximum DC blocking voltage V 30 V R Average forward rectified current I 200 mA F(AV) Peak forward surge current (t<10ms) I 4 A FSM Junction temperature range T -65 to +125 C J Storage temperature range T -65 to +125 C STG 1 Version:D1804 Not Recommended BAT42 / BAT43 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN MAX UNIT (2) Reverse voltage I = 100 A, T = 25C V 30 - V R J R (2) Reverse current V = 25 V, T = 25C I - 500 nA R J R I = 200mA, T = 25C - 1.00 F J I = 10mA, T = 25C BAT42 - 0.40 F J I = 50mA, T = 25C - 0.65 F J (1) Forward voltage V V F I = 200mA, T = 25C - 1.00 F J I = 2mA, T = 25C BAT43 0.26 0.33 F J I = 15mA, T = 25C - 0.45 F J Junction capacitance 1 MHz, V =1V C 7 (Typ.) pF R J I = I = 10mA F R Reverse recovery time t 5 (Typ.) ns rr R = 100 , I = 1mA L RR Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION PART NO. PACKAGE PACKING BAT42 R0 DO-35 10K / 14 Reel BAT42 R0G DO-35 10K / 14 Reel BAT42 A0 DO-35 5K / Box (Ammo) BAT42 A0G DO-35 5K / Box (Ammo) BAT43 R0 DO-35 10K / 14 Reel BAT43 R0G DO-35 10K / 14 Reel BAT43 A0 DO-35 5K / Box (Ammo) BAT43 A0G DO-35 5K / Box (Ammo) 2 Version:D1804 Not Recommended