BAV100, BAV101, BAV102, BAV103 www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES Silicon epitaxial planar diode AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS General purposes DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: MiniMELF (SOD-80) Weight: approx. 31 mg Cathode band color: black Packaging codes / options: GS18/10K per 13 reel (8 mm tape), 10K/box GS08/2.5K per 7 reel (8 mm tape), 12.5K/box PARTS TABLE TYPE TYPE PART ORDERING CODE CIRCUIT CONFIGURATION REMARKS DIFFERENTIATION MARKING BAV100 V = 60 V BAV100-GS18 or BAV100-GS08 - Single Tape and reel RRM BAV101 V = 120 V BAV101-GS18 or BAV101-GS08 - Single Tape and reel RRM BAV102 V = 200 V BAV102-GS18 or BAV102-GS08 - Single Tape and reel RRM BAV103 V = 250 V BAV103-GS18 or BAV103-GS08 - Single Tape and reel RRM ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BAV100 V 60 V RRM BAV101 V 120 V RRM Repetitive peak reverse voltage BAV102 V 200 V RRM BAV103 V 250 V RRM BAV100 V 50 V R BAV101 V 100 V R Reverse voltage BAV102 V 150 V R BAV103 V 200 V R Peak forward surge current t = 1 s I 1A p FSM Repetitive peak forward current I 625 mA FRM Forward continuous current I 250 mA F Power dissipation P 500 mW tot Rev. 1.8, 12-Jul-17 Document Number: 85542 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BAV100, BAV101, BAV102, BAV103 www.vishay.com Vishay Semiconductors THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to lead R 350 K/W thJL On PC board Thermal resistance junction to ambient air R 500 K/W thJA 50 mm x 50 mm x 1.6 mm Junction temperature T 175 C j Storage temperature range T -65 to +175 C stg ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 100 mA V 1V F F V = 50 V BAV100 I 100 nA R R V = 100 V BAV101 I 100 nA R R V = 150 V BAV102 I 100 nA R R V = 200 V BAV103 I 100 nA R R Reverse current T = 100 C, V = 50 V BAV100 I 15 A j R R T = 100 C, V = 100 V BAV101 I 15 A j R R T = 100 C, V = 150 V BAV102 I 15 A j R R T = 100 C, V = 200 V BAV103 I 15 A j R R I = 100 A, t /T = 0.01, R p BAV100 V 60 V (BR) t = 0.3 ms p I = 100 A, t /T = 0.01, R p BAV101 V 120 V Breakdown voltage (BR) t = 0.3 ms p BAV102 V 200 V (BR) I = 100 A, t /T = 0.01, R p t = 0.3 ms p BAV103 V 250 V (BR) V = 0 V, f = 1 MHz, R Diode capacitance C 1.5 pF D V = 50 mV HF Differential forward current I = 10 mA r 5 F f I = I = 30 mA, F R Reverse recovery time t 50 ns rr i = 3 mA, R = 100 R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1000 T = 25 C 100 j 100 Scattering Limit 10 Scattering Limit 10 1 V = V 1 R RRM 0.1 0.01 0.1 200 2.0 0 40 80 120 160 0 0.4 0.8 1.2 1.6 94 9084 T - Junction Temperature (C) 94 9085 V - Forward Voltage (V) j F Fig. 1 - Reverse Current vs. Junction Temperature Fig. 2 - Forward Current vs. Forward Voltage Rev. 1.8, 12-Jul-17 Document Number: 85542 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Current (A) R I - Forward Current (mA) F