BAV170E6433HTMA1 Infineon

BAV170... Silicon Low Leakage Diode Array Low-leakage applications Medium speed switching times 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 BAV170 Type Package Configuration Marking BAV170 SOT23 common cathode JXs Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 80 V Diode reverse voltage V R 85 Peak reverse voltage V RM 200 mA Forward current I F Non-repetitive peak surge forward current I A FSM t = 1 s 4.5 t = 1 s 0.5 250 mW Total power dissipation P tot T 35C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 2) K/W Junction - soldering point R 460 thJS BAV170 1 Pb-containing package may be available upon special request 2 For calculation of R please refer to Application Note Thermal Resistance thJA 1 2007-04-19BAV170... Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 85 - - V Breakdown voltage V (BR) I = 100 A (BR) Reverse current I nA R V = 75 V - - 5 R V = 75 V, T = 150 C - - 80 R A mV Forward voltage V F I = 1 mA - - 900 F I = 10 mA - - 1000 F I = 50 mA - - 1100 F I = 150 mA - - 1250 F AC Characteristics - 2 - pF Diode capacitance C T V = 0 V, f = 1 MHz R Reverse recovery time t - 0.6 1.5 s rr I = 10 mA, I = 10 mA, measured at I = 1mA, F R R R = 100 L Test circuit for reverse recovery time D.U.T. Pulse generator: t = 10 s, D = 0.05, t = 0.6ns, p r R = 50 i Oscillograph F Oscillograph: R = 50 , t = 0.35ns, C 1pF r EHN00019 2 2007-04-19