X-On Electronics has gained recognition as a prominent supplier of BAT54 RF Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. BAT54 RF Schottky Diodes & Rectifiers are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

BAT54 RF Taiwan Semiconductor

BAT54 RF electronic component of Taiwan Semiconductor
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Part No.BAT54 RF
Manufacturer: Taiwan Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Diode Small Signal Schottky 30V 0.2A 3-Pin SOT-23 T/R
Datasheet: BAT54 RF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
6000: USD 0.0219 ea
Line Total: USD 131.4 
Availability - 0
MOQ: 6000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 6000
Multiples : 3000
6000 : USD 0.0219

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Configuration
Vf - Forward Voltage
Packaging
Brand
Operating Temperature Classification
Operating Temp Range
Peak Non-Repetitive Surge Current
Rev Curr
Avg Forward Curr Max
Peak Rep Rev Volt
Rev Recov Time
Rad Hardened
Pin Count
Package Type
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BAT54 RF from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAT54 RF and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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BAT54 / A / C / S Taiwan Semiconductor Small Signal Product 230mW SMD Schottky Barrier Diode FEATURES - Fast switching speed - Surface mount device type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free and RoHS compliant - Green compound (Halogen free) with suffix on packing code and prefix on date code SOT-23 MECHANICAL DATA - Case: Bend lead SOT-23 small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260C/10s - Polarity: Indicated by cathode band - Weight: 8 0.5 mg - Marking Code: KL1,KL2,KL3,KL4 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Peak Pepetitive Peak Reverse Voltage V RRM Working Peak Reverse Voltage V 30 V RWM V DC Reverse Voltage R Forward Continuous Current I 200 mA F Repetitive Peak Forward current (tp1S 0.5) I 300 mA FRM Forward Surge Current t<1.0s I 600 mA FSM Power Dissipation Pd 200 mW Thermal Resistance, Junction to Ambient R 500 C/W JA Operating and Storage Temperature T , T -55 to 125 j STG C PARAMETER SYMBOL MIN MAX UNIT I =100A Reverse Breakdown Voltage V 30 -- V R (BR) I =0.1mA -- 0.24 V F I =1mA -- 0.32 V F I =10mA V Forward Voltage -- 0.40 V F F I =30mA -- 0.50 V F I =100mA -- 1.00 V F V =25V I Reverse Current -- 2.0 A R R Total Capacitance V =1V, f=1.0MHz C -- 10 pF R T I =I =10mA, R =100, I =1mA Reverse Recovery Time t -- 5 ns F R L RR rr Version: E14 Document Number: DS S1404001BAT54 / A / C / S Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) Fig. 1 Typical Forward Characteristics Fig. 2 Typical Reverse Characteristics 1000 1000 o 125 C 100 100 o 75 C 10 10 o 125 C 1 o 25 C o -40 C o 25 C 1 0. 1 0. 01 0. 1 0 5 10 15 20 25 30 0. 0 0. 2 0. 4 0. 6 0. 8 1. 0 1. 2 1. 4 1. 6 Reverse Voltage (V) V , Instantaneous Forward Voltage (V) F Fig. 4 Typical Junction Capacitance Fig. 3 Admissible Power Dissipation Curve 250 14 12 200 10 150 8 6 100 4 50 2 0 0 0 25 50 75 100 125 150 0 4 8 12 16 20 24 28 Reverse Voltage (V) Ambient Temperature (C) Version: E14 Document Number: DS S1404001 Power Dissipation (mW) I , Instantaneous Forward Current (mA) F Junction Capacitance (pF) Reverse Current (uA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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