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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.BAV103 High Voltage, General Purpose Diode
April 2013
BAV103
High Voltage, General Purpose Diode
Description
Cathode Band
A general purpose diode that couples high forward con-
ductance fast swiching speed and high blocking volt-
ages in a glass leadless LL-34 surface mount package.
Placement of the expansion gap has no relationship to
the location of the cathode terminal which is indicated by
the first color band.
SOD80
(1)
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Value Units
W Working Inverse Voltage 200 V
IV
I Average Rectified Current 200 mA
O
I DC Forward Current 500 mA
F
i Recurrent Peak Forward Current 600 mA
f
Pulse Width = 1.0 s 1.0 A
I Non-repetitive Peak Forward Current
FSM
Pulse Width = 1.0 s4.0 A
Storage Temperature Range -65 to +200 C
T
STG
T Operating Junction Temperature -65 to +200 C
J
Note:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol Parameter Value Units
Power Dissipation 500 mW
P
D
Linear Derating Factor from T = 25C3.33mW/C
A
R Thermal Resistance, Junction to Ambient 350 C/W
JA
2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAV103 Rev. 1.1.0 1