BAV21W RH Taiwan Semiconductor

BAV19W/BAV20W/BAV21W Taiwan Semiconductor Small Signal Product 410mW High Voltage SMD Switching Diode FEATURES - These diodes are also available in DO-35, LL34 Package - Surface Mount Device Type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix means green compound (halogen-free) SOD-123F MECHANICAL DATA - Case: Flat lead SOD-123F small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260C/10s - Polarity: Indicated by cathode band - Weight: 4.85 0.5mg MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER VALUE SYMBOL UNIT Power Dissipation P 410 mW D Repetitive Peak Reverse Voltage V 250 V RRM Repetitive Peak Forward Current I 625 mA FRM Mean Forward Current I 200 mA O Pulse Width = 1 s 4 Non-Repetitive Peak Forward I A FSM Surge Current Pulse Width = 1 s 1 o Thermal Resistance (Junction to Ambient) R 375 JA C/W o Junction and Storage Temperature Range T , T -65 to +150 J STG C PARAMETER MIN MAX SYMBOL UNIT BAV19W 120 - Reverse Breakdown Voltage V BAV20W 200 - V (BR) (Note 1) BAV21W 250 - I = 100 mA - 1 F V Forward Voltage V F I = 200 mA - 1.25 F BAV19W Reverse Leakage Current I BAV20W - 100 nA R (Note 2) BAV21W V = 0 , f = 1.0 MHz Junction Capacitance C - 5 pF R J t 50 Reverse Recovery Time (Note 3) - ns rr Note 1 : Test condition : I = 100A R Note 2 : Test condition : BAV19W V =100V, BAV20W V =150V, BAV21W V =200V R R R Note 3 : Test condition : I = I = 30mA , R =100 , Irr=3mA F R L Document Number: DS S1501003 Version: E15BAV19W/BAV20W/BAV21W Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A Fig. 1 Admissible Power Dissipation Curve Fig. 2 Typicla Forward Characteristics 300 1000 250 100 200 10 150 1 100 0. 1 50 0 0. 01 0 25 50 75 100 125 150 01 2 o Ambient Temperature ( C) Forward Voltage (V) Fig. 3 Leakage Current VS. Fig. 3 Junction Temperature 100 10 1 0. 1 0. 01 0 100 200 o Junction Temperature ( C) Document Number: DS S1501003 Version: E15 Leakage Current (uA) Power Dissipation (mW) Forward Current (mA)