X-On Electronics has gained recognition as a prominent supplier of BYG21M R3G Rectifiers across the USA, India, Europe, Australia, and various other global locations. BYG21M R3G Rectifiers are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

BYG21M R3G Taiwan Semiconductor

Hot BYG21M R3G electronic component of Taiwan Semiconductor
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Part No.BYG21M R3G
Manufacturer: Taiwan Semiconductor
Category: Rectifiers
Description: Rectifiers 1.5A, 1000V Fast avalanche Surface Mount Rectifier
Datasheet: BYG21M R3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
42: USD 0.1227 ea
Line Total: USD 5.15 
Availability - 122
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ: 42  Multiples: 1
Pack Size: 1
Availability Price Quantity
122
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 42
Multiples : 1
42 : USD 0.1227
54 : USD 0.0971
54 : USD 0.0962
55 : USD 0.0952
100 : USD 0.0551

76
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5302
10 : USD 0.3993
100 : USD 0.2728
500 : USD 0.2706
1000 : USD 0.2673
3600 : USD 0.2607
7200 : USD 0.2475
21600 : USD 0.2431
46800 : USD 0.2409

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Product
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BYG21M R3G from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BYG21M R3G and other electronic components in the Rectifiers category and beyond.

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BYG21M Taiwan Semiconductor CREAT BY ART 1.5A, 1000V Fast avalanche Surface Mount Rectifier FEATURES - Glass passivated junction chip - Ideal for automated placement - Fast switching for high efficiency - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 TYPICAL APPLICATION DO-214AC (SMA) The superior avalanche capability of BYG21M is specially suited for free-wheeling, clamping, snubber, demagnetization in power supplies and other power switching applications. MECHANICAL DATA Case: DO-214AC (SMA) Molding compound: UL flammability classification rating 94V-0 Moisture sensitivity level (MSL): level 1, per J-STD-020 Part no. with suffix means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 64 mg (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER SYMBOL BYG21M UNIT Maximum repetitive peak reverse voltage V 1000 V RRM Maximum RMS voltage V 700 V RMS Maximum DC blocking voltage V 1000 V DC Maximum average forward rectified current I 1.5 A F(AV) Peak forward surge current, 8.3 ms single half sine-wave I 50 A FSM superimposed on rated load I =1A 1.5 Maximum instantaneous forward voltage F V V F (Note 1) I =1.5A 1.6 F T =25C 1 J Maximum reverse current Rated V T =100C I 10 A R J R T =125C 50 J Pulse energy in avalanche mode, non repetitive E 30 mJ RSM (Inductive load switch off ) T =25C, I =1.23A A (BR)R Maximum reverse recovery time (Note 2) t 120 ns rr Typical junction capacitance (Note 3) C 13 pF J R 20 JL Typical thermal resistance C/W R 70 JA Operating junction temperature range T - 55 to +150 C J Storage temperature range T - 55 to +150 C STG Note 1: Pulse test with PW=300s, 1% duty cycle Note 2: Test conditions: I =0.5A, I =1.0A, I =0.25A F R RR Note 3: Measured at 1 MHz and applied reverse voltage of 4.0V Version: A1601BYG21M Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKING PACKING CODE PACKAGE PACKING PART NO. SUFFIX CODE SUFFIX R3 SMA 1,800 / 7 Plastic reel R2 SMA 7,500 / 13 Paper reel M2 SMA 7,500 / 13 Plastic reel BYG21M H G (Note 1) F3 Folded SMA 1,800 / 7 Plastic reel F2 Folded SMA 7,500 / 13 Paper reel F4 Folded SMA 7,500 / 13 Plastic reel Note 1: Whole series with green compound EXAMPLE EXAMPLE PART NO. PACKING CODE PACKING CODE DESCRIPTION PART NO. PART NO. SUFFIX SUFFIX AEC-Q101 qualified BYG21MHR3G BYG21M H R3 G Green compound RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A FIG.1 MAXIMUM AVERAGE FORWARD FIG. 2 TYPICAL REVERSE CHARACTERISTICS CURRENT DERATING 2 100 T =125C J 1.5 10 1 1 0.5 0. 1 T =25C J 0 0. 01 0 25 50 75 100 12 5 150 0 20406080 100 LEAD TEMPERATURE ( C) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 4 TYPICAL JUNCTION CAPACITANCE FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 50 70 f=1.0MHz 60 Vslg=50mVp-p 40 8.3ms single half sine wave 50 30 40 30 20 20 10 10 0 0 1 10 100 0. 1 1 10 100 REVERSE VOLTAGE (V) NUMBER OF CYCLES AT 60 Hz Version: A1601 AVERAGE FORWARD CURRENT (A) PEAK FORWARD SURGE URRENT (A) JUNCTION CAPACITANCE (pF) INSTANTANEOUS REVERSE CURRENT(A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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