BZT55C62 Taiwan Semiconductor

BZT55C2V4 thru BZT55C75 Taiwan Semiconductor Small Signal Product 5% Tolerance SMD Zener Diode FEATURES - Wide zener voltage range selection: 2.4V to 75V - VZ Tolerance Selection of 5% - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free and RoHS compliant - All external surfaces are corrosion resistant a leads are readily solderable QUADRO Mini-MELF (LS34) Hermetically Sealed Glass MECHANICAL DATA - Case: QUADRO Mini-MELF Package (JEDEC DO-213) o - High temperature soldering guaranteed: 270 C/10s - Polarity: Indicated by cathode band - Weight: 29 2.5mg MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER SYMBO VALUE UNIT P Power Dissipation 500 mW D Forward Voltage I = 10 mA V 1 V F F o Thermal Resistance (Junction to Ambient) (Note 1) R 500 C/W JA o Junction and Storage Temperature Range T , T - 65 to +175 J STG C Note1: Valid provided that electrodes are kept at ambient temperature Zener I vs. V Characteristics V : Voltage at I BR ZK I : Test current for voltage V ZK BR Z : Dynamic impedance at I ZK ZK I : Test current for voltage V ZT Z V : Voltage at current I Z ZT Z : Dynamic impedance at I ZT ZT I : Maximum steady state current ZM V : Voltage at I ZM ZM Document Number: DS S1408007 Version: F14BZT55C2V4 thru BZT55C75 Taiwan Semiconductor Small Signal o ELECTRICAL CHARACTERISTICS ( T = 25 C unless otherwise noted ) A V I (Volt) Z ZT I Z I ( ) I Z I ( ) I V ( A) V ZT ZT ZT ZK ZK ZK R R R Part Number (mA) Max (mA) Max Max (V) Nom Min Max BZT55C2V4 2.4 2.28 2.56 5 85 1 600 50 1 BZT55C2V7 2.7 2.51 2.89 5 85 1 600 10 1 BZT55C3V0 3.0 2.8 3.2 5 85 1 600 4 1 BZT55C3V3 3.3 3.1 3.5 5 85 1 600 2 1 BZT55C3V6 3.6 3.4 3.8 5 85 1 600 2 1 BZT55C3V9 3.9 3.7 4.1 5 85 1 600 2 1 BZT55C4V3 4.3 4.0 4.6 5 75 1 600 1 1 BZT55C4V7 4.7 4.4 5.0 5 60 1 600 0.5 1 BZT55C5V1 5.1 4.8 5.4 5 35 1 550 0.1 1 BZT55C5V6 5.6 5.2 6.0 5 25 1 450 0.1 1 BZT55C6V2 6.2 5.8 6.6 5 10 1 200 0.1 2 BZT55C6V8 6.8 6.4 7.2 5 8 1 150 0.1 3 BZT55C7V5 7.5 7.0 7.9 5 7 1 50 0.1 5 BZT55C8V2 8.2 7.7 8.7 5 7 1 50 0.1 6.2 BZT55C9V1 9.1 8.5 9.6 5 10 1 50 0.1 6.8 BZT55C10 10 9.4 10.6 5 15 1 70 0.1 7.5 BZT55C11 11 10.4 11.6 5 20 1 70 0.1 8.2 BZT55C12 12 11.4 12.7 5 20 1 90 0.1 9.1 BZT55C13 13 12.4 14.1 5 26 1 110 0.1 10 BZT55C15 15 13.8 15.6 5 30 1 110 0.1 11 BZT55C16 16 15.3 17.1 5 40 1 170 0.1 12 BZT55C18 18 16.8 19.1 5 50 1 170 0.1 13 BZT55C20 20 18.8 21.1 5 55 1 220 0.1 15 BZT55C22 22 20.8 23.3 5 55 1 220 0.1 16 BZT55C24 24 22.8 25.6 5 80 1 220 0.1 18 BZT55C27 27 25.1 28.9 5 80 1 220 0.1 20 BZT55C30 30 28 32 5 80 1 220 0.1 22 BZT55C33 33 31 35 5 80 1 220 0.1 24 BZT55C36 36 34 38 5 80 1 220 0.1 27 BZT55C39 39 37 41 2.5 90 0.5 500 0.1 28 BZT55C43 43 40 46 2.5 90 0.5 600 0.1 32 BZT55C47 47 44 50 2.5 110 0.5 700 0.1 35 BZT55C51 51 48 54 2.5 125 0.5 700 0.1 38 BZT55C56 56 52 60 2.5 135 0.5 1,000 0.1 42 BZT55C62 62 58 66 2.5 150 0.5 1,000 0.1 47 BZT55C68 68 64 72 2.5 160 0.5 1,000 0.1 51 BZT55C75 75 70 79 2.5 170 0.5 1,000 0.1 56 Notes 1. The Zener Voltage (V ) is tested under pulse condition of 10ms. Z 2. The device numbers listed have a standard tolerance on the nomial zener voltage of 5%. 3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative. 4. The Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an RMS value equal to 10% of the dc zener current(I or I ) is superimposed to I or I . ZT ZK ZT ZK Document Number: DS S1408007 Version: F14