ES1BFS - ES1JFS Taiwan Semiconductor 1A, 100V-600V Surface Mount Super Fast Rectifiers FEATURES KEY PARAMETERS Glass passivated junction chip PARAMETER VALUE UNIT Ideal for automated placement I 1 A F(AV) Low power loss, high efficiency V 100 - 600 V RRM Low profile package RoHS Compliant I 30 A FSM Halogen-free according to IEC 61249-2-21 T 150 C J MAX Package SOD-128 APPLICATIONS Configuration Single Die Freewheeling application Switching mode converters and inverters, computer and telecommunication. MECHANICAL DATA Case: SOD-128 Molding compound meets UL 94V-0 flammability rating Moisture sensitivity level: level 1, per J-STD-020 Terminal: Pure tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.028 g (approximately) SOD-128 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL ES1BFS ES1DFS ES1GFS ES1JFS UNIT Marking code on the device ES1BFS ES1DFS ES1GFS ES1JFS Repetitive peak reverse voltage V 100 200 400 600 V RRM Reverse voltage, total rms value V 70 140 280 420 V R(RMS) Forward current I 1 A F(AV) Surge peak forward 8.3ms at T = 25C 30 A A current, single half sine- I FSM wave superimposed on 1.0ms at T = 25C 60 A A rated load per diode Junction temperature T -55 to +150 C J Storage temperature T -55 to +150 C STG 1 Version:B2004 ES1BFS - ES1JFS Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT 28 Junction-to-lead thermal resistance R C/W JL 67 Junction-to-ambient thermal resistance R C/W JA 20 Junction-to-case thermal resistance R C/W JC Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board) ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT I = 0.5A, T = 25C 0.80 - V F J I = 1.0A, T = 25C 0.85 0.95 V ES1BFS F J ES1DFS I = 0.5A, T = 125C 0.58 - V F J I = 1.0A, T = 125C 0.71 0.81 V F J I = 0.5A, T = 25C 0.86 - V F J I = 1.0A, T = 25C 0.93 1.30 V F J (1) Forward voltage per diode ES1GFS V F I = 0.5A, T = 125C 0.69 - V F J I = 1.0A, T = 125C 0.77 0.89 V F J I = 0.5A, T = 25C 1.04 - V F J I = 1.0A, T = 25C 1.15 1.70 V F J ES1JFS I = 0.5A, T = 125C 0.80 - V F J I = 1.0A, T = 125C 0.93 1.06 V F J T = 25C A - 1 J (2) Reverse current rated V per diode I R R T = 125C A J - 20 I =0.5A,I =1.0A, F R Reverse recovery time t - 35 ns rr Irr=0.25A ES1BFS 18 - pF ES1DFS Junction capacitance per diode 1 MHz, V =4.0V C R J ES1GFS 16 - pF ES1JFS 15 - pF Notes: (1) Pulse test with PW=0.3 ms (2) Pulse test with PW=30 ms ORDERING INFORMATION (1) ORDERING CODE PACKAGE PACKING ES1xFS M3G SOD-128 3,500 / 7 reel ES1xFS M2G SOD-128 14,000 / 13 reel Notes: (1) x defines voltage from 100V(ES1BFS) to 600V(ES1JFS) 2 Version:B2004