X-On Electronics has gained recognition as a prominent supplier of ES2AA R2 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. ES2AA R2 Schottky Diodes & Rectifiers are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

ES2AA R2 Taiwan Semiconductor

ES2AA R2 electronic component of Taiwan Semiconductor
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See Product Specifications
Part No.ES2AA R2
Manufacturer: Taiwan Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Diode Switching 50V 2A 2-Pin SMA T/R
Datasheet: ES2AA R2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
7500: USD 0.0911 ea
Line Total: USD 683.25 
Availability - 0
MOQ: 7500  Multiples: 7500
Pack Size: 7500
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 7500
Multiples : 7500
7500 : USD 0.0911

   
Manufacturer
Product Category
RoHS - XON
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ES2AA R2 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ES2AA R2 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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ES2AA - ES2JA 2.0AMPS Surface Mount Super Fast Rectifiers SMA/DO-214AC RoHRoHSS Pb COCOMMPPLILIANANCCEE Features Glass passivated junction chip For surface mounted application Low profile package Built-in strain rellef Ideal for automated placement Easy pick and place Super fast recovery time for high efficiency Glass passivated chip junction High temperature soldering: 260 /10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V-0 Green compound with suffix on packing code & prefix on datecode Dimensions in inches and (millimeters) Mechanical Data Cases: Molded plastic Marking Diagram Terminals: Pure tin plated, lead free ES2XA = Specific Device Code Polarity: Indicated by cathode band G = Green Compound Packing: 12mm tape per EIA STD RS-481 Y = Year Weight: 0.064 grams M = Work Month Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% ES ES ES ES ES ES ES ES Symbol Units Type Number 2AA 2BA 2CA 2DA 2FA 2GA 2HA 2JA Maximum Recurrent Peak Reverse Voltage V 50 100 150 200 300 400 500 600 V RRM Maximum RMS Voltage V 35 70 105 140 210 280 350 420 V RMS Maximum DC Blocking Voltage V 50 100 150 200 300 400 500 600 V DC Maximum Average Forward Rectified Current I 2 A F(AV) Peak Forward Surge Current, 8.3 ms Single Half Sine- I 50 A FSM wave Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) V 0.95 1.3 1.7 V F 2 A Maximum DC Reverse Current T =25 10 uA A I R at Rated DC Blocking Voltage T =125 350 uA A Maximum Reverse Recovery Time (Note 2) Trr 35 nS Typical Junction Capacitance (Note 3) 25 20 Cj pF R 75 JA O Maximum Thermal Resistance C/W R 20 JL O Operating Temperature Range T - 55 to + 150 J C O Storage Temperature Range T - 55 to + 150 STG C Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: I =0.5A, I =1.0A, I =0.25A F R RR Note 3: Measured at 1 MHz and Applied V =4.0 Volts R Version:F11RATINGS AND CHARACTERISTIC CURVES (ES2AA THRU ES2JA) FIG.1- MAXIMUM FORWARD CURRENT DERATING FIG. 2- TYPICAL REVERSE CHARACTERISTICS CURVE 1000 3 RESISTER OR INDUCTIVE LOAD 100 2 TA=125 10 1 TA=75 1 0 TA=25 80 90 100 110 120 130 140 150 o LEAD TEMPERATURE ( C) 0.1 0.01 FIG. 3- MAXIMUM NON-REPETITIVE PEAK FORWARD 0 20 40 60 80 100 120 140 SURGE CURRENT PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 60 8.3mS Single Half Sine Wave (JEDEC Method) 50 40 30 20 10 FIG. 5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISRICS 100 0 TA=25 1 10 100 Pulse Width=300us NUMBER OF CYCLES AT 60 Hz 1% Duty Cycle ES2FA-2GA 10 FIG. 4- TYPICAL JUNCTION CAPACITANCE ES2AA-2DA 60 1 o TA=25 C 50 f=1.0MHz Vsig=50mVp-p 40 ES2HA-2JA 0.1 30 ES2AA-DA 20 ES2FA-JA 10 0.01 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 FORWARD VOLTAGE (V) 0.1 1 10 100 REVERSE VOLTAGE (V) Version:F11 PEAK FORWARD SURGE A AVERAGE FORWARD JUNCTION CAPACITANCE (pF) CURRENT (A) CURRENT (A) INSTANTANEOUS REVERSE CURRENT (uA) INSTANTANEOUS FORWARD CURRENT (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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