X-On Electronics has gained recognition as a prominent supplier of ES3A R6 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. ES3A R6 Schottky Diodes & Rectifiers are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

ES3A R6 Taiwan Semiconductor

ES3A R6 electronic component of Taiwan Semiconductor
Images are for reference only
See Product Specifications
Part No.ES3A R6
Manufacturer: Taiwan Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Diode Switching 50V 3A Automotive 2-Pin SMC T/R
Datasheet: ES3A R6 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.2078 ea
Line Total: USD 623.4 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.2078

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Brand
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ES3A R6 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ES3A R6 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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ES3A - ES3J 3.0AMPS Surface Mount Super Fast Rectifiers SMC/DO-214AB RoHRoHSS Pb COCOMMPPLILIANANCCEE Features Glass passivated junction chip For surface mounted application Low profile package Built-in strain rellef, Ideal for automated placement Easy pick and place Esuper fast recovery time for high efficiency High temperature soldering guaranteed: 260 /10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V-0 Green compound with suffix on packing code & prefix on datecode High reliability grade (AEC Q101 specified) Dimensions in inches and (millimeters) Mechanical Data Cases: Molded plastic Marking Diagram Epoxy: UL 94V-0 rate flame retardant Terminals: Pure tin plated, lead free, solderable per ES3X = Specific Device Code MIL-STD-202, Method 208 guaranteed G = Green Compound Polarity: Color band denotes cathode Y = Year Weight: 0.21 grams M = Work Month Packing: 16mm tape per EIA STD RS-481 Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbo ES ES ES ES ES ES ES ES Units Type Number l 3A 3B 3C 3D 3F 3G 3H 3J Maximum Recurrent Peak Reverse Voltage V 50 100 150 200 300 400 500 600 V RRM Maximum RMS Voltage V 35 70 105 140 210 280 350 420 V RMS Maximum DC Blocking Voltage V 50 100 150 200 300 400 500 600 V DC Maximum Average Forward Rectified see fig. 1 I 3 A F(AV) Peak Forward Surge Current, 8.3 ms Single Half Sine- I 100 A FSM wave Superimposed on Rated Load (IEDEC method) Maximum Instantaneous Forward Voltage (Note 1) V 0.95 1.3 1.7 V F 3 A Maximum DC Reverse Current T =25 10 A I uA R at Rated DC Blocking Voltage T =100 500 A Typical Junction Capacitance (Note 2) 45 30 Cj pF Typical Reverse Recovery Time (Note 3) Trr 35 nS R 47 jA O Typical Thermal Resistance C/W R 12 jL O Operating Temperature Range T - 55 to + 150 C J O T Storage Temperature Range - 55 to + 150 STG C Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Note 3: Reverse Recovery Test Conditions: I =0.5A, I =1.0A, I =0.25A F R RR Version:F11RATINGS AND CHARACTERISTIC CURVES (ES3A THRU ES3J) FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE FIG.1 MAXIMUM FORWARD CURRENT DERATING CURRENT CURVE 100 3.5 90 3 80 70 2.5 60 2 50 8.3mS Half Sin Wave 1.5 40 30 1 20 0.5 10 0 0 1 10 100 0 25 50 75 100 125 150 o NUMBER OF CYCLES AT 60 Hz LEAD TEMPERATURE ( C) FIG. 4 TYPICAL REVERSE CHARACTERISTICS FIG. 3 TYPICAL FORWARD CHARACTERISRICS 1000 10 ES3F-3G 100 ES3A-3D TA=125 1 10 ES3H-3J TA=75 0.1 1 TA=25 0.1 0.01 0 20 40 60 80 100 120 140 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V) FIG. 5 TYPICAL JUNCTION CAPACITANCE FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE 100 105 90 75 10 60 ES3A-3D 45 1 30 ES3F-3J 15 0 0.1 1 10 100 0.01 0.1 1 10 100 REVERSE VOLTAGE (V) HEATING TIME (sec) Version:F11 AVERAGE FORWARD INSTANTANEOUS FORWARD JUNCTION CAPACITANCE (pF) CURRENT (A) CURRENT (A) PEAK FORWARD SURGE A INSTANTANEOUS REVERSE TRANSIENT THERMAL IMPEDANCE A CURRENT (A) CURRENT (uA) ( /W)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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