ES3A - ES3J
Taiwan Semiconductor
3A, 50V - 600V Surface Mount Super Fast Rectifier
FEATURES
KEY PARAMETERS
Glass passivated chip junction
PARAMETER VALUE UNIT
Ideal for automated placement
I 3 A
F(AV)
Super fast recovery time for high efficiency
V 50 - 600 V
RRM
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
I 100 A
FSM
Halogen-free according to IEC 61249-2-21
T 150 C
J MAX
Package DO-214AB (SMC)
APPLICATIONS
Configuration Single die
High frequency rectification
Freewheeling application
Switching mode converters and inverters in computer, automotive
and telecommunication.
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix means AEC-Q101 qualified
Packing code with suffix means green compound
(halogen-free)
Moisture sensitivity level: level 1, per J-STD-020
Terminal: Matte tin plated leads, solderable per J-STD-002
DO-214AB (SMC)
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.21 g (approximately)
ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted)
A
PARAMETER SYMBOL ES3A ES3B ES3C ES3D ES3F ES3G ES3H ES3J UNIT
Marking code on the device ES3A ES3B ES3C ES3D ES3F ES3G ES3H ES3J
Repetitive peak reverse voltage V 50 100 150 200 300 400 500 600 V
RRM
Reverse voltage, total rms value V 35 70 105 140 210 280 350 420 V
R(RMS)
Maximum DC blocking voltage V 50 100 150 200 300 400 500 600 V
DC
Forward current I 3 A
F(AV)
Surge peak forward current, 8.3 ms
single half sine-wave superimposed I 100 A
FSM
on rated load per diode
Junction temperature T - 55 to +150 C
J
Storage temperature T - 55 to +150 C
STG
1 Version:L1708
ES3A - ES3J
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER SYMBOL LIMIT UNIT
Junction-to-lead thermal resistance per diode R 12 C/W
JL
Junction-to-ambient thermal resistance per diode R 47 C/W
JA
ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted)
A
PARAMETER CONDITIONS SYMBOL TYP. MAX. UNIT
ES3A
ES3B
- 0.95 V
ES3C
ES3D
(1)
Forward voltage per diode I = 3A, T = 25C V
F J F
ES3F
- 1.30 V
ES3G
ES3H
- 1.70 V
ES3J
T = 25C - 10 A
J
(2)
Reverse current @ rated V per diode I
R R
T = 100C - 500 A
J
ES3A
ES3B
45 - pF
ES3C
ES3D
Junction capacitance 1 MHz, V =4.0V C
R J
ES3F
ES3G
30 - pF
ES3H
ES3J
I =0.5A , I =1.0A
F R
Reverse recovery time - 35
t ns
rr
I =0.25A
RR
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
2 Version:L1708