X-On Electronics has gained recognition as a prominent supplier of ES3DB R5G Rectifiers across the USA, India, Europe, Australia, and various other global locations. ES3DB R5G Rectifiers are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

ES3DB R5G Taiwan Semiconductor

ES3DB R5G electronic component of Taiwan Semiconductor
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Part No.ES3DB R5G
Manufacturer: Taiwan Semiconductor
Category: Rectifiers
Description: Rectifiers 3A 200V
Datasheet: ES3DB R5G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1118 ea
Line Total: USD 0.11 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1118
10 : USD 0.0973
25 : USD 0.0947
50 : USD 0.0922
100 : USD 0.0897
250 : USD 0.0879

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 76
Multiples : 76
76 : USD 0.0961
100 : USD 0.0897
250 : USD 0.0879

   
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We are delighted to provide the ES3DB R5G from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ES3DB R5G and other electronic components in the Rectifiers category and beyond.

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ES3A - ES3J Taiwan Semiconductor 3A, 50V - 600V Surface Mount Super Fast Rectifier FEATURES KEY PARAMETERS Glass passivated chip junction PARAMETER VALUE UNIT Ideal for automated placement I 3 A F(AV) Super fast recovery time for high efficiency V 50 - 600 V RRM Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC I 100 A FSM Halogen-free according to IEC 61249-2-21 T 150 C J MAX Package DO-214AB (SMC) APPLICATIONS Configuration Single die High frequency rectification Freewheeling application Switching mode converters and inverters in computer, automotive and telecommunication. MECHANICAL DATA Case: DO-214AB (SMC) Molding compound meets UL 94V-0 flammability rating Part no. with suffix means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) Moisture sensitivity level: level 1, per J-STD-020 Terminal: Matte tin plated leads, solderable per J-STD-002 DO-214AB (SMC) Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.21 g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL ES3A ES3B ES3C ES3D ES3F ES3G ES3H ES3J UNIT Marking code on the device ES3A ES3B ES3C ES3D ES3F ES3G ES3H ES3J Repetitive peak reverse voltage V 50 100 150 200 300 400 500 600 V RRM Reverse voltage, total rms value V 35 70 105 140 210 280 350 420 V R(RMS) Maximum DC blocking voltage V 50 100 150 200 300 400 500 600 V DC Forward current I 3 A F(AV) Surge peak forward current, 8.3 ms single half sine-wave superimposed I 100 A FSM on rated load per diode Junction temperature T - 55 to +150 C J Storage temperature T - 55 to +150 C STG 1 Version:L1708 ES3A - ES3J Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction-to-lead thermal resistance per diode R 12 C/W JL Junction-to-ambient thermal resistance per diode R 47 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP. MAX. UNIT ES3A ES3B - 0.95 V ES3C ES3D (1) Forward voltage per diode I = 3A, T = 25C V F J F ES3F - 1.30 V ES3G ES3H - 1.70 V ES3J T = 25C - 10 A J (2) Reverse current @ rated V per diode I R R T = 100C - 500 A J ES3A ES3B 45 - pF ES3C ES3D Junction capacitance 1 MHz, V =4.0V C R J ES3F ES3G 30 - pF ES3H ES3J I =0.5A , I =1.0A F R Reverse recovery time - 35 t ns rr I =0.25A RR Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms 2 Version:L1708

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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