ES3D V7G Taiwan Semiconductor

ES3A - ES3J Taiwan Semiconductor 3A, 50V - 600V Surface Mount Super Fast Rectifier FEATURES KEY PARAMETERS Glass passivated chip junction PARAMETER VALUE UNIT Ideal for automated placement I 3 A F(AV) Super fast recovery time for high efficiency V 50 - 600 V RRM Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC I 100 A FSM Halogen-free according to IEC 61249-2-21 T 150 C J MAX Package DO-214AB (SMC) APPLICATIONS Configuration Single die High frequency rectification Freewheeling application Switching mode converters and inverters in computer, automotive and telecommunication. MECHANICAL DATA Case: DO-214AB (SMC) Molding compound meets UL 94V-0 flammability rating Part no. with suffix means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) Moisture sensitivity level: level 1, per J-STD-020 Terminal: Matte tin plated leads, solderable per J-STD-002 DO-214AB (SMC) Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.21 g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL ES3A ES3B ES3C ES3D ES3F ES3G ES3H ES3J UNIT Marking code on the device ES3A ES3B ES3C ES3D ES3F ES3G ES3H ES3J Repetitive peak reverse voltage V 50 100 150 200 300 400 500 600 V RRM Reverse voltage, total rms value V 35 70 105 140 210 280 350 420 V R(RMS) Maximum DC blocking voltage V 50 100 150 200 300 400 500 600 V DC Forward current I 3 A F(AV) Surge peak forward current, 8.3 ms single half sine-wave superimposed I 100 A FSM on rated load per diode Junction temperature T - 55 to +150 C J Storage temperature T - 55 to +150 C STG 1 Version:L1708 ES3A - ES3J Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction-to-lead thermal resistance per diode R 12 C/W JL Junction-to-ambient thermal resistance per diode R 47 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP. MAX. UNIT ES3A ES3B - 0.95 V ES3C ES3D (1) Forward voltage per diode I = 3A, T = 25C V F J F ES3F - 1.30 V ES3G ES3H - 1.70 V ES3J T = 25C - 10 A J (2) Reverse current @ rated V per diode I R R T = 100C - 500 A J ES3A ES3B 45 - pF ES3C ES3D Junction capacitance 1 MHz, V =4.0V C R J ES3F ES3G 30 - pF ES3H ES3J I =0.5A , I =1.0A F R Reverse recovery time - 35 t ns rr I =0.25A RR Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms 2 Version:L1708