ES3JBHR5G Taiwan Semiconductor

ES3AB - ES3JB Taiwan Semiconductor 3A, 50V - 600V Surface Mount Super Fast Rectifier FEATURES KEY PARAMETERS Glass passivated junction chip PARAMETER VALUE UNIT Ideal for automated placement I 3 A F(AV) Low profile package V 50 - 600 V RRM Super fast recovery time for high efficiency Compliant to RoHS Directive 2011/65/EU and I 100 A FSM in accordance to WEEE 2002/96/EC T 150 C J MAX Halogen-free according to IEC 61249-2-21 Package DO-214AA (SMB) Configuration Single die APPLICATIONS Switching mode power supply (SMPS) Adapters Lighting application Converter MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94V-0 flammability rating Part no. with suffix H means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) Moisture sensitivity level: level 1,per J-STD-020 Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked DO-214AA (SMB) Weight: 0.11 g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A ES ES ES ES ES ES ES ES PARAMETER SYMBOL UNIT 3AB 3BB 3CB 3DB 3FB 3GB 3HB 3JB ES ES ES ES ES ES ES ES Marking code on the device 3AB 3BB 3CB 3DB 3FB 3GB 3HB 3JB Repetitive peak reverse voltage V 50 100 150 200 300 400 500 600 V RRM Reverse voltage, total rms value V 30 70 105 140 210 280 350 420 V R(RMS) Forward current I 3 A F(AV) Surge peak forward current, 8.3 ms single half sine-wave I 100 A FSM superimposed on rated load per diode Junction temperature T - 55 to +150 C J Storage temperature T - 55 to +150 C STG 1 Version:B1706 ES3AB - ES3JB Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction-to-lead thermal resistance R 24 C/W JL Junction-to-ambient thermal resistance R 84 C/W JA Junction-to-case thermal resistance R 26 C/W JC Thermal Performance Note: Units mounted on recommended PCB (10mm x 10mm Cu pad test board) ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT ES3AB ES3BB 0.80 0.92 V ES3CB ES3DB I = 1.5A,T = 25C V F J F ES3FB 0.90 1.04 V ES3GB ES3HB 1.11 1.30 V ES3JB ES3AB ES3BB 0.86 1.00 V ES3CB ES3DB I = 3.0A,T = 25C V F J F ES3FB 0.98 1.13 V ES3GB ES3HB 1.24 1.45 V ES3JB (1) Forward voltage per diode ES3AB ES3BB 0.66 0.75 V ES3CB ES3DB I = 1.5A,T = 125C V F J F ES3FB 0.73 0.85 V ES3GB ES3HB 0.85 0.98 V ES3JB ES3AB ES3BB 0.73 0.84 V ES3CB ES3DB I = 3.0A,T = 125C V F J F ES3FB 0.83 0.95 V ES3GB ES3HB 0.99 1.13 V ES3JB - 10 T = 25C A J (2) Reverse current rated V per diode R I R - 100 T = 125C A J ES3AB ES3BB 46 - pF ES3CB ES3DB Junction capacitance 1 MHz, V =4.0V C R J ES3FB 41 - pF ES3GB ES3HB 34 - pF ES3JB I =0.5A ,I =1.0A F R Reverse recovery time 35 t - ns rr I =0.25A RR Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms 2 Version:B1706