ESH1DM - ESH1JM Taiwan Semiconductor CREAT BY ART 1A, 200V - 600V Surface Mount Ultrafast Rectifiers FEATURES - Very low profile - typical height of 0.68mm - Reduce switching and conduction loss - Ideal for automated placement - Ultrafast recovery times for high frequency - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 APPLICATION Micro SMA ESH1DM to ESH1JM is ideal device for the compact space PCB design. Specially as boost diode in power factor correction circuitry. The device is also intended for use as a free wheeling diode in power supplies For chargers, LED lighting, and other power switching applications. MECHANICAL DATA Case: Micro SMA Molding compound: UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 Part no. with suffix means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 6mg (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER ESH1DM ESH1GM ESH1JM SYMBOL UNIT Marking code D3 D5 D7 Maximum repetitive peak reverse voltage V 200 400 600 V RRM Maximum average forward rectified current I 1 A F(AV) Peak forward surge current, 8.3 ms single half sine-wave I 15 A FSM superimposed on rated load TYP MAX Maximum instantaneous forward voltage (Note 1) V V F 1 A 1.25 1.5 TYP MAX Maximum reverse current rated VR T =25 C I - 1 A J R T =125 C J 5 50 Maximum reverse recovery time (Note 2) 25 trr ns Typical junction capacitance (Note 3) C 3 pF J R 40 JM Typical thermal resistance (Note 4) C/W R 92 JA T Operating junction temperature range -55 to +150 C J Storage temperature range T -55 to +150 C STG Note 1: Pulse test with PW=300s, 1% duty cycle Note 2: Test conditions: I =0.5A, I =1.0A, I =0.25A F R RR Note 3: Measured at 1 MHz and applied reverse voltage of 4.0 V Note 4: Thermal resistance R - from junction to ambient, R - and junction to mount JA JM Version: C1602ESH1DM - ESH1JM Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKING CODE PACKING CODE PACKAGE PACKING PART NO. SUFFIX SUFFIX ESH1xM H RS G Micro SMA 3,000 / 7 Plastic reel (Note 1, 2) Note 1: defines voltage from 200V (ESH1DM) to 600V (ESH1JM) Note 2: Whole series with green compound EXAMPLE PACKING PART NO. PACKING CODE EXAMPLE P/N PART NO. DESCRIPTION CODE SUFFIX SUFFIX Automotive grade ESH1JMHRSG ESH1JM H RS G Green compound RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A FIG.1 MAXIMUM FORWARD CURRENT FIG. 2 MAXIMUM FORWARD SURGE CURRENT DERATING CURVE 15 1.2 8.3ms single half sine wave 1 10 0.8 0.6 5 0.4 Resistive or 0.2 inductive load 0 0 110 100 0 25 50 75 100 125 150 175 NUMBER OF CYCLES AT 60 Hz LEAD TEMPERATURE ( C) FIG. 4 TYPICAL REVERSE CHARACTERISTICS FIG. 3 TYPICAL FORWARD CHARACTERISTICS 10 10 1 T =125C J T =125C J 0. 1 1 0. 01 T =25C T =25C J J 0. 001 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 20406080 100 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version: C1602 INSTANTANEOUS FORWARD CURRENT(A) AVERAGE FORWARD CURRENT (A) PEAK FORWARD SURAGE CURRENT(A) INSTANTANEOUS REVERSE CURRENT(A)