ES2BAL ES2JAL Taiwan Semiconductor 2A, 100V-600V Super Fast Surface Mount Rectifier FEATURES KEY PARAMETERS Glass passivated junction chip PARAMETER VALUE UNIT Ideal for automated placement 2 A I F Low power loss, high efficiency V 100-600 V Low profile package RRM Moisture sensitivity level: level 1, per J-STD-020 50 A I FSM RoHS Compliant T 150 C JMAX Halogen-free according to IEC 61249-2-21 Thin SMA Package Configuration Single die APPLICATIONS Freewheeling application Switching mode converters and inverters, computer and telecommunication. MECHANICAL DATA Case: Thin SMA Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.029g (approximately) Thin SMA ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL ES2BAL ES2DAL ES2GAL ES2JAL UNIT Marking code on the device ES2BAL ES2DAL ES2GAL ES2JAL Repetitive peak reverse voltage V 100 200 400 600 V RRM Reverse voltage, total rms value V 70 140 280 420 V R(RMS) Forward current I 2 A F Surge peak forward current t = 8.3ms 50 A single half sine-wave I FSM superimposed on rated load t = 1.0ms 120 A Junction temperature T -55 to +150 C J Storage temperature T -55 to +150 C STG 1 Version: C2006 ES2BAL ES2JAL Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT 24 Junction-to-lead thermal resistance R C/W JL 72 Junction-to-ambient thermal resistance R C/W JA 14 Junction-to-case thermal resistance R C/W JC Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board) ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT I = 1.0A, T = 25C 0.82 - V F J I = 2.0A, T = 25C 0.88 0.95 V ES2BAL F J ES2DAL I = 1.0A, T = 125C 0.66 - V F J I = 2.0A, T = 125C 0.74 0.84 V F J I = 1.0A, T = 25C 0.89 - V F J I = 2.0A, T = 25C 0.97 1.30 V F J (1) Forward voltage ES2GAL V F I = 1.0A, T = 125C 0.72 - V F J I = 2.0A, T = 125C 0.81 0.91 V F J I = 1.0A, T = 25C 1.11 - V F J I = 2.0A, T = 25C 1.24 1.70 V F J ES2JAL I = 1.0A, T = 125C 0.86 - V F J I = 2.0A, T = 125C 1.01 1.14 V F J T = 25C A - 1 J (2) Reverse current rated V I R R T = 125C A - 25 J I = 0.5A, I = 1.0A, F R Reverse recovery time t - 35 ns rr I = 0.25A rr ES2BAL 28 - pF ES2DAL Junction capacitance 1MHz, V = 4.0V C R J ES2GAL 27 - pF ES2JAL 21 - pF Notes: (1) Pulse test with PW = 0.3ms (2) Pulse test with PW = 30ms ORDERING INFORMATION (1) ORDERING CODE PACKAGE PACKING ES2xAL M3G Thin SMA 3,500 / 7 reel ES2xAL M2G Thin SMA 14,000 / 13 reel Notes: (1) x defines voltage from 100V(ES2BAL) to 600V(ES2JAL) 2 Version: C2006