GBU406 Taiwan Semiconductor

GBU401 GBU407 Taiwan Semiconductor 4A, 50V - 1000V Standard Bridge Rectifier FEATURES KEY PARAMETERS AEC-Q101 qualified available PARAMETER VALUE UNIT Ideal for printed circuit board I 4 A F High case dielectric strength of 1500V RMS V 50 - 1000 V RRM High surge current capability UL Recognized File E-326243 I 150 A FSM RoHS Compliant T 150 C J MAX Halogen-free according to IEC 61249-2-21 Package GBU Configuration Quad APPLICATIONS Switching mode power supply (SMPS) Adapters Lighting application MECHANICAL DATA Case: GBU Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Polarity: As marked Weight: 4.00g (approximately) GBU ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A GBU GBU GBU GBU GBU GBU GBU PARAMETER SYMBOL UNIT 401 402 403 404 405 406 407 GBU GBU GBU GBU GBU GBU GBU Marking code on the device 401 402 403 404 405 406 407 Repetitive peak reverse voltage V 50 100 200 400 600 800 1000 V RRM Reverse voltage, total rms value V 35 70 140 280 420 560 700 V R(RMS) Forward current I 4 A F Surge peak forward T = 25C 150 A J current, 8.3ms single half sine-wave I FSM superimposed on T = 125C 80 A J rated load Surge peak forward T = 25C 280 A J current, 1.0ms single half sine-wave I FSM superimposed on T = 125C 260 A J rated load 1 Version: M2103 GBU401 GBU407 Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A GBU GBU GBU GBU GBU GBU GBU PARAMETER SYMBOL UNIT 401 402 403 404 405 406 407 2 2 Rating for fusing (t<8.3ms) I t 93 A s Junction temperature T - 55 to +150 C J Storage temperature T - 55 to +150 C STG THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance R 20 C/W JA Junction-to-case thermal resistance R 4 C/W JC ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT I = 2A, T = 25C - 1.0 V F J (1) Forward voltage per diode V F I = 4A, T = 25C - 1.1 V F J T = 25C - 5 A J (2) Reverse current rated V per diode I R R T = 125C - 500 A J GBU401 GBU402 100 - pF GBU403 Junction capacitance per diode GBU404 1MHz, V = 4.0V C R J GBU405 GBU406 45 - pF GBU407 Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION (1)(2) ORDERING CODE PACKAGE PACKING GBU40x GBU 20 / Tube GBU40xH GBU 20 / Tube Notes: 1. x defines voltage from 50V(GBU401) to 1000V(GBU407) 2. H means AEC-Q101 qualified 2 Version: M2103