HS1DFS - HS1MFS Taiwan Semiconductor 1A, 200V-1000V High Efficient Surface Mount Rectifiers FEATURES KEY PARAMETERS Glass passivated junction chip PARAMETER VALUE UNIT Ideal for automated placement I 1 A F(AV) Low power loss, high efficiency V 200 - 1000 V RRM Fast switching for high efficiency Low profile package I 35 A FSM RoHS Compliant T 150 C J MAX Halogen-free according to IEC 61249-2-21 Package SOD-128 Configuration Single Die APPLICATIONS Freewheeling application Switching mode converters and inverters, computer and telecommunication. MECHANICAL DATA Case: SOD-128 Molding compound meets UL 94V-0 flammability rating Moisture sensitivity level: level 1, per J-STD-020 Terminal: Pure tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.028 g (approximately) SOD-128 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL HS1DFS HS1GFS HS1JFS HS1KFS HS1MFS UNIT Marking code on the device HS1DFS HS1GFS HS1JFS HS1KFS HS1MFS Repetitive peak reverse voltage V 200 400 600 800 1000 V RRM Reverse voltage, total rms value V 140 280 420 560 700 V R(RMS) Forward current I 1 A F(AV) Surge peak forward 8.3ms at T = 25C 35 A A current, single half sine-wave I FSM superimposed on 1.0ms at T = 25C 90 A A rated load per diode Junction temperature T -55 to +150 C J Storage temperature T -55 to +150 C STG 1 Version:B2004 HS1DFS - HS1MFS Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT 29 Junction-to-lead thermal resistance R C/W JL 51 Junction-to-ambient thermal resistance R C/W JA 22 Junction-to-case thermal resistance R C/W JC Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board) ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT I = 0.5A, T = 25C 0.80 - V F J I = 1.0A, T = 25C 0.85 1.00 V F J HS1DFS I = 0.5A, T = 125C 0.65 - V F J I = 1.0A, T = 125C 0.71 0.80 V F J I = 0.5A, T = 25C 0.84 - V F J I = 1.0A, T = 25C 0.91 1.30 V F J HS1GFS I = 0.5A, T = 125C 0.68 - V F J I = 1.0A, T = 125C 0.76 0.86 V F J (1) Forward voltage per diode V F I = 0.5A, T = 25C 0.92 - V F J I = 1.0A, T = 25C 1.02 1.70 V F J HS1JFS I = 0.5A, T = 125C 0.73 - V F J I = 1.0A, T = 125C 0.83 1.02 V F J I = 0.5A, T = 25C 1.32 - V F J I = 1.0A, T = 25C 1.49 1.70 V HS1KFS F J HS1MFS I = 0.5A, T = 125C 0.98 - V F J I = 1.0A, T = 125C 1.16 1.39 V F J T = 25C A - 1 J (2) Reverse current rated V per diode I R R T = 125C A J - 35 HS1DFS - 50 ns HS1GFS I =0.5A,I =1.0A, F R HS1JFS Reverse recovery time t rr Irr=0.25A HS1KFS - 75 ns HS1MFS HS1DFS 20 - pF HS1GFS 17 - pF Junction capacitance per diode 1 MHz, V =4.0V C R J HS1JFS 13 - pF HS1KFS 8 - pF HS1MFS Notes: (1) Pulse test with PW=0.3 ms (2) Pulse test with PW=30 ms 2 Version:B2004