HS2A - HS2M Taiwan Semiconductor 2A, 50V - 1000V High Efficient Surface Mount Rectifier FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement I 2 A F(AV) Glass passivated junction chip V 50 - 1000 V RRM Fast switching for high efficiency I 50 A Compliant to RoHS Directive 2011/65/EU and FSM in accordance to WEEE 2002/96/EC T 150 C J MAX Halogen-free according to IEC 61249-2-21 Package DO-214AA (SMB) Configuration Single Die APPLICATIONS Switching mode power supply (SMPS) Adapters Lighting application Converter MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94V-0 flammability rating Packing code with suffix means green compound (halogen-free) Part no. with suffix H means AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.09 g (approximately) DO-214AA (SMB) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL HS2A HS2B HS2D HS2F HS2G HS2J HS2K HS2M UNIT Marking code on the device HS2A HS2B HS2D HS2F HS2G HS2J HS2K HS2M Repetitive peak reverse voltage V 50 100 200 300 400 600 800 1000 V RRM Reverse voltage, total rms value V 35 70 140 210 280 420 560 700 V R(RMS) Maximum DC blocking voltage V 50 100 200 300 400 600 800 1000 V DC Forward current I 2 A F(AV) Surge peak forward current, 8.3 ms single half sine-wave I 50 A FSM superimposed on rated load per diode Junction temperature T - 55 to +150 C J Storage temperature T - 55 to +150 C STG 1 Version:K1701 HS2A - HS2M Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Ambient Thermal Resistance R 80 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT - HS2A V - HS2B V 1.0 HS2D - V HS2F - V (1) Forward voltage per diode I = 2A,T = 25C V F J F HS2G - 1.3 V HS2J - V HS2K - 1.7 V - HS2M V - 5 T = 25C A J (2) Reverse current rated V per diode I R R - 150 T = 125C A J HS2A - pF HS2B - pF HS2D 50 - pF - pF HS2F Junction capacitance 1 MHz, V =4.0V C R J HS2G - pF HS2J - pF HS2K 30 - pF HS2M - pF HS2A - ns ns HS2B - HS2D ns - 50 HS2F ns I =0.5A ,I =1.0A - F R Reverse recovery time t rr HS2G I =0.25A ns - RR HS2J - ns HS2K ns - 75 ns HS2M - Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms 2 Version:K1701