X-On Electronics has gained recognition as a prominent supplier of HS3JB R5G Rectifiers across the USA, India, Europe, Australia, and various other global locations. HS3JB R5G Rectifiers are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

HS3JB R5G Taiwan Semiconductor

HS3JB R5G electronic component of Taiwan Semiconductor
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See Product Specifications
Part No.HS3JB R5G
Manufacturer: Taiwan Semiconductor
Category: Rectifiers
Description: Rectifiers 75ns 3A 600V High Efficient Recovery Rectifier
Datasheet: HS3JB R5G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0032 ea
Line Total: USD 1 
Availability - 3704
Ship by Thu. 05 Sep to Mon. 09 Sep
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3403
Ship by Thu. 05 Sep to Mon. 09 Sep
MOQ : 1
Multiples : 1
1 : USD 0.5411
10 : USD 0.4722
100 : USD 0.3346
500 : USD 0.2883
1000 : USD 0.2694
6800 : USD 0.2575
23800 : USD 0.2563
47600 : USD 0.2539

   
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We are delighted to provide the HS3JB R5G from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HS3JB R5G and other electronic components in the Rectifiers category and beyond.

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creat by ART HS3AB - HS3MB 3.0AMPS High Efficient Surface Mount Rectifiers SMB/DO-214AA Features Glass passivated junction chip. For surface mounted application Low forward voltage drop Low profile package Built-in stain relief, ideal for automatic placement Fast switching for high efficiency High temperature soldering: 260/10 seconds at terminals Meet MSL level 1, per J-STD-020D, lead free maximum peak of 260 Plastic material used carries Underwriters Laboratory Classification 94V-0 Green compound with suffix on packing code & prefix on datecode Mechanical Data Case: Molded plastic Terminal: Pure tin plated, lead free Polarity: Indicated by cathode band Packing: 12mm tape per EIA STD RS-481 Weight: 0.093 grams Ordering Information (example) Packing code Packing code Part No. Package Packing (Green) R5 R5G HS3AB SMB 850 / 7 REEL Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. HS HS HS HS HS HS HS HS Symbol Unit Parameter 3AB 3BB 3DB 3FB 3GB 3JB 3KB 3MB Maximum Repetitive Peak Reverse Voltage V 50 100 200 300 400 600 800 1000 V RRM Maximum RMS Voltage V 35 70 140 210 280 420 560 700 V RMS Maximum DC Blocking Voltage V 50 100 200 300 400 600 800 1000 V DC Maximum Average Forward Rectified Current I 3 A F(AV) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave I 100 A FSM Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) V 1.0 1.3 1.7 V F 3 A Maximum Reverse Current Rated VR T =25 10 A I uA R T =125 250 A Maximum Reverse Recovery Time (Note 2) 50 75 Trr nS Typical Junction Capacitance (Note 3) Cj 80 50 pF O Typical Thermal Resistance R 60 jA C/W O Operating Temperature Range T - 55 to + 150 C J O Storage Temperature Range T - 55 to + 150 STG C Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: I =0.5A, I =1.0A, I =0.25A F R RR Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Version:I13RATINGS AND CHARACTERISTIC CURVES (HS3AB THRU HS3MB) FIG.1 FORWARD CURRENT DERATING CURVE FIG. 2 TYPICAL REVERSE CHARACTERISTICS 3.5 1000 3 2.5 TA=125 2 100 1.5 1 RESISTIVE OR INDUCTIVE LOAD 0.5 10 0 0 255075 100 125 150 175 TA=25 o LEAD TEMPERATURE ( C) 1 FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 300 8.3mS Single Half Sine Wave 250 JEDEC Method 0. 1 200 0 20 40 60 80 100 120 140 TA=25 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 150 100 FIG. 5 TYPICAL FORWARD CHARACTERISTICS 100 50 TA=25 0 1 10 100 1000 NUMBER OF CYCLES AT 60 Hz FIG. 4 TYPICAL JUNCTION CAPACITANCE 10 175 HS3AB-HS3DB 150 TA=25 125 HS3GB 100 1 HS3AB-HS3GB 75 50 HS3JB-HS3MB HS3JB-HS3MB 25 0. 1 0 0 0. 2 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 1. 8 0. 1 1 10 100 1000 FORWARD VOLTAGE (V) REVERSE VOLTAGE (V) Version:I13 PEAK FORWARD SURGE URRENT AVERAGE FORWARD CAPACITANCE (pF) (A) CURRENT (A) INSTANTANEOUS REVERSE CURRENT (uA) INSTANTANEOUS FORWARD CURRENT (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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