HS3A - HS3M Taiwan Semiconductor 3A, 50V - 1000V High Efficient Surface Mount Rectifier FEATURES KEY PARAMETERS Glass passivated junction chip PARAMETER VALUE UNIT Ideal for automated placement I 3 A F(AV) Low forward voltage drop V 50 - 1000 V RRM Low profile package Compliant to RoHS Directive 2011/65/EU and I 150 A FSM in accordance to WEEE 2002/96/EC T 150 C J MAX Halogen-free according to IEC 61249-2-21 Package DO-214AB (SMC) Configuration Single die APPLICATIONS High frequency rectification Freewheeling application Switching mode converters and inverters in computer, automotive and telecommunication MECHANICAL DATA Case: DO-214AB (SMC) Molding compound meets UL 94V-0 flammability rating Part no. with suffix means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) Moisture sensitivity level: level 1, per J-STD-020 Terminal: Matte tin plated leads, solderable per J-STD-002 DO-214AB (SMC) Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.21 g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A SYMBOL HS3A HS3B HS3D HS3F HS3G HS3J HS3K HS3M UNIT PARAMETER Marking code on the device HS3A HS3B HS3D HS3F HS3G HS3J HS3K HS3M Repetitive peak reverse voltage V 50 100 200 300 400 600 800 1000 V RRM Reverse voltage, total rms value V 35 70 140 210 280 420 560 700 V R(RMS) Maximum DC blocking voltage V 50 100 200 300 400 600 800 1000 DC Forward current I 3 A F(AV) Surge peak forward current, 8.3 ms single half sine-wave uperimposed on I 150 A FSM rated load per diode Junction temperature T - 55 to +150 C J Storage temperature T - 55 to +150 C STG 1 Version:I1708 HS3A - HS3M Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction-to-ambient thermal resistance R 60 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP. MAX. UNIT HS3A HS3B - 1.0 V HS3D HS3F (1) Forward voltage per diode I = 3A, T = 25C V F J F HS3G - 1.3 V HS3J HS3K - 1.7 V HS3M T = 25C - 10 A J (2) Reverse current rated V per diode I R R T = 125C - 250 A J HS3A HS3B HS3D 80 - pF HS3F Junction capacitance 1 MHz, V =4.0V C R J HS3G HS3J HS3K 50 - pF HS3M HS3A HS3B HS3D - 50 ns I =0.5A , I =1.0A HS3F F R Reverse recovery time t rr HS3G I =0.25A RR HS3J HS3K - 75 ns HS3M Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms 2 Version:I1708