MBRF1035CT MBRF10200CT Taiwan Semiconductor 10A, 35V - 200V Schottky Barrier Rectifier FEATURES KEY PARAMETERS AEC-Q101 qualified available PARAMETER VALUE UNIT Low power loss, high efficiency I 10 A F Guard ring for overvoltage protection V 35 - 200 V RRM High surge current capability UL Recognized File E-326243 I 120 A FSM RoHS Compliant T 150 C J MAX Halogen-free according to IEC 61249-2-21 Package ITO-220AB Configuration Dual dies APPLICATIONS Switching mode power supply (SMPS) Adapters DC to DC converters MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N m maximum Meet JESD 201 class 2 whisker test Polarity: As marked ITO-220AB Weight: 1.70g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF 1035 1045 1050 1060 1090 10100 10150 10200 PARAMETER SYMBOL UNIT CT CT CT CT CT CT CT CT MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF Marking code on the 1035 1045 1050 1060 1090 10100 10150 10200 device CT CT CT CT CT CT CT CT Repetitive peak reverse V 35 45 50 60 90 100 150 200 V RRM voltage Reverse voltage, total V 24 31 35 42 63 70 105 140 V R(RMS) rms value Forward current I 10 A F Surge peak forward current, 8.3ms single half I 120 A FSM sine wave superimposed on rated load Peak repetitive reverse I 0.5 A (1) RRM surge current Peak repetitive forward current (Rated V , I 10 A R FRM Square wave, 20KHz) 1 Version: M2105 MBRF1035CT MBRF10200CT Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF 1035 1045 1050 1060 1090 10100 10150 10200 PARAMETER SYMBOL UNIT CT CT CT CT CT CT CT CT Critical rate of rise of off- dv/dt 10,000 V/s state voltage Junction temperature T -55 to +150 C J Storage temperature T -55 to +150 C STG Notes: 1. tp = 2.0s, 1.0KHz THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-case thermal resistance R 3.5 C/W JC ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT MBRF1035CT - 0.70 V MBRF1045CT MBRF1050CT - 0.80 V MBRF1060CT I = 5A,T = 25C F J MBRF1090CT - 0.85 V MBRF10100CT MBRF10150CT - 0.88 V MBRF10200CT MBRF1035CT - 0.80 V MBRF1045CT MBRF1050CT - 0.90 V MBRF1060CT (1) Forward voltage per diode I = 10A,T = 25C V F J F MBRF1090CT - 0.95 V MBRF10100CT MBRF10150CT - 0.98 V MBRF10200CT MBRF1035CT - 0.57 V MBRF1045CT MBRF1050CT - 0.65 V MBRF1060CT I = 5A,T = 125C F J MBRF1090CT - 0.75 V MBRF10100CT MBRF10150CT - 0.78 V MBRF10200CT 2 Version: M2105