MBRF1545CT-Y MBRF15200CT-Y Taiwan Semiconductor 15A, 45V - 200V Schottky Barrier Rectifier FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Guard ring for overvoltage protection I 15 A F High surge current capability V 45 - 200 V RRM RoHS Compliant Halogen-free according to IEC 61249-2-21 I 150 A FSM T 150 C J MAX APPLICATIONS Package ITO-220AB Switching mode power supply (SMPS) Configuration Dual dies Adapters DC to DC converters MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N m maximum Meet JESD 201 class 1A whisker test Polarity: As marked Weight: 1.70g (approximately) ITO-220AB ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A MBRF MBRF MBRF MBRF MBRF 1545 1560 15100 15150 15200 PARAMETER SYMBOL UNIT CT-Y CT-Y CT-Y CT-Y CT-Y MBRF MBRF MBRF MBRF MBRF 1545 1560 15100 15150 15200 Marking code on the device CT CT CT CT CT Repetitive peak reverse voltage V 45 60 100 150 200 V RRM Reverse voltage, total rms value V 31 42 70 105 140 V R(RMS) Forward current I 15 A F Surge peak forward current, 8.3ms single I 150 A FSM half sine wave superimposed on rated load (1) Peak repetitive reverse surge current I 1.0 0.5 A RRM Peak repetitive forward current (Rated V , R I 15 A FRM Square wave, 20KHz) Critical rate of rise of off-state dv/dt 10,000 V/s voltage Junction temperature T -55 to +150 C J Storage temperature T -55 to +150 C STG 1 Version: D2105 MBRF1545CT-Y MBRF15200CT-Y Taiwan Semiconductor Notes: 1. tp = 2.0s, 1.0KHz THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-case thermal resistance R 3.5 C/W JC ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT - - MBRF1545CT-Y V - 0.75 MBRF1560CT-Y V I = 7.5A,T = 25C - 0.92 MBRF15100CT-Y F J V MBRF15150CT-Y - 0.95 V MBRF15200CT-Y - 0.84 MBRF1545CT-Y V - - MBRF1560CT-Y V I = 15A,T = 25C - - MBRF15100CT-Y F J V MBRF15150CT-Y - - V MBRF15200CT-Y (1) Forward voltage per diode V F - 0.57 MBRF1545CT-Y V - 0.65 MBRF1560CT-Y V I = 7.5A,T = 125C - 0.82 MBRF15100CT-Y F J V MBRF15150CT-Y - 0.92 V MBRF15200CT-Y - 0.72 MBRF1545CT-Y V - - MBRF1560CT-Y V I = 15A,T = 125C - - MBRF15100CT-Y F J V MBRF15150CT-Y - - V MBRF15200CT-Y - 500 A MBRF1545CT-Y - 300 A MBRF1560CT-Y T = 25C I J R MBRF15100CT-Y - 100 A MBRF15150CT-Y Reverse current rated V MBRF15200CT-Y R (2) per diode - 10 mA MBRF1545CT-Y - 7.5 mA MBRF1560CT-Y T = 125C J MBRF15100CT-Y - 5 mA MBRF15150CT-Y MBRF15200CT-Y Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms 2 Version: D2105