MUR360S V7G Taiwan Semiconductor

MUR305S - MUR360S Taiwan Semiconductor 3A, 50V - 600V Surface Mount Ultrafast Power Rectifier FEATURES KEY PARAMETERS Glass passivated junction PARAMETER VALUE UNIT Ideal for automated placement I 3 A F(AV) Built-in strain relief V 50 - 600 V RRM Ultrafast recovery time for high efficiency Compliant to RoHS Directive 2011/65/EU and I 75 A FSM in accordance to WEEE 2002/96/EC T 175 C J MAX Halogen-free according to IEC 61249-2-21 Package DO-214AB (SMC) Configuration Single die APPLICATIONS High frequency rectification Freewheeling application Switching mode converters and inverters in computer, automotive and telecommunication. MECHANICAL DATA Case: DO-214AB (SMC) Molding compound meets UL 94V-0 flammability rating Part no. with suffix means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) Moisture sensitivity level: level 1, per J-STD-020 Terminal: Matte tin plated leads, solderable per J-STD-002 DO-214AB (SMC) Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.21 g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A MUR MUR MUR MUR MUR MUR PARAMETER SYMBOL UNIT 305S 310S 315S 320S 340S 360S MUR MUR MUR MUR MUR MUR Marking code on the device 305S 310S 315S 320S 340S 360S Repetitive peak reverse voltage V 50 100 150 200 400 600 V RRM Reverse voltage, total rms value V 35 70 105 140 280 420 V R(RMS) Maximum DC blocking voltage V 50 100 150 200 400 600 V DC Forward current I 3 A F(AV) Surge peak forward current, 8.3 ms single half sine-wave I 75 A FSM superimposed on rated load per diode Junction temperature T - 55 to +175 C J Storage temperature T - 55 to +175 C STG 1 Version:H1903 MUR305S - MUR360S Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance per diode R 11 C/W JL ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP. MAX. UNIT MUR305S MUR310S - 0.875 V MUR315S I = 3A, T = 25C V F J F MUR320S MUR340S - 1.250 V MUR360S (1) Forward voltage per diode MUR305S MUR310S - 0.710 V MUR315S I = 3A, T = 150C V F J F MUR320S MUR340S - 1.050 V MUR360S MUR305S MUR310S - 5 A MUR315S T = 25C I J R MUR320S MUR340S - 10 A Reverse current rated V MUR360S R (2) per diode MUR305S MUR310S - 150 A MUR315S T = 150C I J R MUR320S MUR340S - 250 A MUR360S MUR305S MUR310S - 25 ns MUR315S I =0.5A , I =1.0A F R Reverse recovery time t rr MUR320S I =0.25A RR MUR340S - 50 ns MUR360S Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms 2 Version:H1903