X-On Electronics has gained recognition as a prominent supplier of P6KE51CA R0 ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. P6KE51CA R0 ESD Suppressors / TVS Diodes are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

P6KE51CA R0 Taiwan Semiconductor

P6KE51CA R0 electronic component of Taiwan Semiconductor
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Part No.P6KE51CA R0
Manufacturer: Taiwan Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: Diode TVS Single Bi-Dir 43.6V 600W 2-Pin DO-15
Datasheet: P6KE51CA R0 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3400: USD 0.1119 ea
Line Total: USD 380.46 
Availability - 0
MOQ: 3400  Multiples: 3400
Pack Size: 3400
Availability Price Quantity
0
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 3400
Multiples : 3400
3400 : USD 0.1119

   
Manufacturer
Product Category
RoHS - XON
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Brand
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the P6KE51CA R0 from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the P6KE51CA R0 and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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CREAT BY ART P6KE SERIES 600 Watts Transient Voltage Suppressor DO-15 RoHSRoHS Pb CCOOMMPPLILIANANCECE Features UL Recognized File E-326243 Qualified as per AEC-Q101 Plastic package has Underwriters Laboratory Flammability Classification 94V-0 600 watts surge capability at 10 / 1000 us waveform Excellent clamping capability Low Dynamic impedance Fast response time: Typically less than 1.0ps from 0 volt to VBR for unidirectional and 5.0ns for bidirectional Typical I less than 1uA above 10V R High temperature soldering guaranteed: 260 / 10 seconds / .375 ,(9.5mm) lead length / 5lbs., (2.3kg) tension Green compound with suffix on packing code & prefix on datecode Dimensions in inches and (millimeters) Marking Diagram Mechanical Data Case: Molded plastic P6KEXX = Specific Device Code G = Green Compound Lead: Pure tin plated lead free, solderable per MIL-STD-202, Method 208 Y = Year Polarity: Color band denotes cathode except bipolar M = Work Month Weight: 0.42 gram Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol Value Unit Type Number Peak Power Dissipation at T =25, Tp=1ms(Note 1) P 600 Watts A PK Steady State Power Dissipation at T =75 L P 5 Watts D Lead Lengths .375 , 9.5mm (Note 2) Peak Forward Surge Current, 8.3ms Single Half Sine-wave Superimposed on Rated Load I 100 Amps FSM (JEDEC method)(Note 3) Maximum Instantaneous Forward Voltage at 50A for V 3.5 / 5.0 Volts F Unidirectional Only (Note 4) R 10 JL Typical Thermal Resistance /W R 62 JA Operating and Storage Temperature Range T , T -55 to +175 J STG Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above T =25 Per Fig. 2 A Note 2: Mounted on Copper Pad Area 0.4 x 0.4 (10mm x 10mm) Note 3: 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 Pulses Per Minute Maximum Note 4: V =3.5V for Devices of V 200V and V =5.0V Max. for Device V >200V F BR F BR Devices for Bipolar Applications 1. For Bidrectional Use C or CA Suffix for Types P6KE6.8 through Types P6KE440 2. Electrical Characterstics Apply in Both Directions Version:G11RATINGS AND CHARACTERISTIC CURVES (P6KE SERIES) FIG. 1 PEAK PULSE POWER RATING CURVE FIG.2 PULSE DERATING CURVE 100 125 NON-REPETITIVE PULSE WAVEFORM SHOWN in FIG.3 100 TA= 25 10 75 50 1 25 0 0.1 0 25 50 75 100 125 150 175 200 0.1 1 10 100 1000 10000 o T , AMBIENT TEMPERATURE ( C) tp, PULSE WIDTH, (S) A FIG. 3 CLAMPING POWER PULSE WAVEFORM FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT UNIDIRECTIONAL ONLY PULSE WIDTH(td) is DEFINED 100 140 tr=10usec as the POINT WHERE the PEAK 8.3mS Single Half Sine Wave CURRENT DECAYS to 50% OF IPPM 120 JEDEC Method Peak Value IPPM 100 Half Value-IPPM/2 80 10/1000usec, WAVEFORM as DEFINED by R.E.A. 60 40 20 td 0 10 0 0.5 1 1.5 2 2.5 3 3.5 4 1 10 100 t, TIME ms NUMBER OF CYCLES AT 60 Hz FIG. 5 TYPICAL JUNCTION CAPACITANCE 10000 VR=0 1000 MEASURED at 100 STAND-OFF TA=25 VOLTAGE,Vwm f=1.0MHz Vsig=50mVp-p 10 1 10 100 V( ), BREAKDOWN VOLTAGE (V) BR Version:G11 PEAK PULSE CURRENT (%) P , PEAK PULSE POWER, KW CJ, JUNCTION CAPACITANCE (pF) A PPM PEAK PULSE POWER(P ) or IFSM, PEAK FORWARD SURGE A PP CURRENT (A) CURRENT(I ) DERATING IN PPM PERCENTAGE(%)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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